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Electronic components list AMICC, page 4



  1. AMIC Technology

    Site: www.amictechnology.com
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    A63P0636 - 1m X 36 Bit Synchronous High Speed Sram With Burst Counter and Pipelined Data Output
  2. A63P06361 - 1m X 36 Bit Synchronous High Speed Sram With Burst Counter and Flow-through Data Output
  3. A63P06361E - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  4. A63P06361E-6.5 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  5. A63P06361E-6.5F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  6. A63P06361E-7.5 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  7. A63P06361E-7.5F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  8. A63P06361E-8 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  9. A63P06361E-8F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  10. A63P0636E - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  11. A63P0636E-2.6 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  12. A63P0636E-2.6F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  13. A63P0636E-2.8 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  14. A63P0636E-2.8F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  15. A63P0636E-3.2 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  16. A63P0636E-3.2F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  17. A63P0636E-3.5 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  18. A63P0636E-3.5F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  19. A63P0636E-3.8 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  20. A63P0636E-3.8F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  21. A63P0636E-4.2 - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  22. A63P0636E-4.2F - 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  23. A63P7336 - 128k X 36 Bit Synchronous High Speed Sram With Burst Counter and Pipelined Data Output
  24. A63P73361 - 128k X 36 Bit Synchronous High Speed Sram With Burst Counter and Flow-through Data Output
  25. A63P73361E - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  26. A63P73361E-6.5 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  27. A63P73361E-6.5F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  28. A63P73361E-7.5 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  29. A63P73361E-7.5F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  30. A63P73361E-8 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  31. A63P73361E-8F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  32. A63P7336E - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  33. A63P7336E-2.6 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  34. A63P7336E-2.6F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  35. A63P7336E-2.8 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  36. A63P7336E-2.8F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  37. A63P7336E-3.2 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  38. A63P7336E-3.2F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  39. A63P7336E-3.5 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  40. A63P7336E-3.5F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  41. A63P7336E-3.8 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  42. A63P7336E-3.8F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  43. A63P7336E-4.2 - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  44. A63P7336E-4.2F - 128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  45. A63P8336 - 256k X 36 Bit Synchronous High Speed Sram With Burst Counter and Pipelined Data Output
  46. A63P83361 - 256k X 36 Bit Synchronous High Speed Sram With Burst Counter and Flow-through Data Output
  47. A63P83361E - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  48. A63P83361E-6.5 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  49. A63P83361E-6.5F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  50. A63P83361E-7.5 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  51. A63P83361E-7.5F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  52. A63P83361E-8 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  53. A63P83361E-8F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output
  54. A63P8336E - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  55. A63P8336E-2.6 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  56. A63P8336E-2.6F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  57. A63P8336E-2.8 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  58. A63P8336E-2.8F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  59. A63P8336E-3.2 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  60. A63P8336E-3.2F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  61. A63P8336E-3.5 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  62. A63P8336E-3.5F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  63. A63P8336E-3.8 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  64. A63P8336E-3.8F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  65. A63P8336E-4.2 - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  66. A63P8336E-4.2F - 256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
  67. A64E06161 - 1m X 16 Bit Low Voltage Super Ram
  68. A64E06161G - 16 Mb, 1M X 16,
  69. A64E06161G-70 - 1M X 16 Bit Low Voltage Super RAM
  70. A64E06161G-70I - 1M X 16 Bit Low Voltage Super RAM
  71. A64E06161G-85 - 1M X 16 Bit Low Voltage Super RAM
  72. A64E06161G-85I - 1M X 16 Bit Low Voltage Super RAM
  73. A64E16161 - 32 Mb, 2M X 16,
  74. A64E16161G - 32 Mb, 2M X 16,
  75. A64S0616 - 1m X 16 Bit Low Voltage Super Ram
  76. A64S06161A - 16m(1m X 16bit) Normal Mode & Page Mode Static Random Access Memory
  77. A64S06161A-70U - 16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
  78. A64S06161AG-70 - 16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
  79. A64S06161AG-70F - 16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
  80. A64S06161AG-70U - 16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
  81. A64S06161AG-70UF - 16M(1M x 16bit) Normal mode & Page mode Static Random Access Memory
  82. A64S06162A - 16m(1m X 16bit) Normal Mode & Page Mode With Deep Power Down Static Random Access Memory
  83. A64S06162A-70U - 16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
  84. A64S06162AG-70 - 16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
  85. A64S06162AG-70F - 16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
  86. A64S06162AG-70U - 16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
  87. A64S06162AG-70UF - 16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
  88. A64S0616G - 5ns 1M X 16bit Low Voltage Super RAM
  89. A64S0616G-70 - 1M X 16 Bit Low Voltage Super RAM
  90. A64S0616G-70I - 1M X 16 Bit Low Voltage Super RAM
  91. A64S0616G-85 - 1M X 16 Bit Low Voltage Super RAM
  92. A64S0616G-85I - 1M X 16 Bit Low Voltage Super RAM
  93. A64S9316 - 512k X 16 Bit Low Voltage Super Ram
  94. A64S9316G-70 - 512K X 16 Bit Low Voltage Super RAM
  95. A64S9316G-70I - 512K X 16 Bit Low Voltage Super RAM
  96. A64S9316G-85 - 512K X 16 Bit Low Voltage Super RAM
  97. A64S9316G-85I - 512K X 16 Bit Low Voltage Super RAM
  98. A65H73361 - 128k X 36 & 256k X 18 Late Write Synchronous Fast Sram With Pipelined Data Output
  99. A65H73361P-5 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  100. A65H73361P-6 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  101. A65H73361P-7 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  102. A65H83181 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  103. A65H83181P-5 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  104. A65H83181P-6 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  105. A65H83181P-7 - 128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
  106. A67L0618 - 1m X 18, 512k X 36 Lvttl, Pipelined Zebl Sram
  107. A67L06181 - 1m X 18, 512k X 36 Lvttl, Flow-through Zebl Sram
  108. A67L06181E - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  109. A67L06181E-10.0 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  110. A67L06181E-10.0F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  111. A67L06181E-7.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  112. A67L06181E-7.5F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  113. A67L06181E-8.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  114. A67L06181E-8.5F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  115. A67L0618E - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  116. A67L0618E-2.6 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  117. A67L0618E-2.6F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  118. A67L0618E-2.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  119. A67L0618E-2.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  120. A67L0618E-3.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  121. A67L0618E-3.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  122. A67L0618E-3.5 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  123. A67L0618E-3.5F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  124. A67L0618E-3.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  125. A67L0618E-3.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  126. A67L0618E-4.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  127. A67L0618E-4.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  128. A67L0636 - 2m X 18, 1m X 36 Lvttl, Pipelined Zebl Sram
  129. A67L06361 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM family employshigh-speed, low-power CMOS designs using an advancedCMOS process.The A67L16181, A67L06361 SRAMs integrateA 2M X 18,1M X 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without the insertionof any wait cycles during Write-Read alternation. The positiveedge triggered single clock input (CLK) controls allsynchronous
  130. A67L06361E - 2m X 18, 1m X 36 Lvttl, Flow-through Zebl Sram
  131. A67L06361E-6.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  132. A67L06361E-7.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  133. A67L06361E-8.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  134. A67L0636E - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  135. A67L0636E-2.6 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  136. A67L0636E-2.6F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  137. A67L0636E-2.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  138. A67L0636E-2.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  139. A67L0636E-3.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  140. A67L0636E-3.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  141. A67L0636E-3.5 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  142. A67L0636E-3.5F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  143. A67L0636E-3.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  144. A67L0636E-3.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  145. A67L0636E-4.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  146. A67L0636E-4.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  147. A67L16181 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  148. A67L16181-8.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  149. A67L16181E - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  150. A67L16181E-6.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  151. A67L16181E-7.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  152. A67L1618E - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  153. A67L1618E-2.6 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  154. A67L1618E-2.6F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  155. A67L1618E-2.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  156. A67L1618E-2.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  157. A67L1618E-3.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  158. A67L1618E-3.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  159. A67L1618E-3.5 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  160. A67L1618E-3.5F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  161. A67L1618E-3.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  162. A67L1618E-3.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  163. A67L1618E-4.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  164. A67L1618E-4.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  165. A67L7332 - 256k X 16/18, 128k X 32/36 Lvttl, Pipelined Dba Sram
  166. A67L73321 - 256k X 16/18, 128k X 32/36 Lvttl, Flow-through Dba Sram
  167. A67L73321E-10 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  168. A67L73321E-11 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  169. A67L73321E-12 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  170. A67L7332E-45 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  171. A67L7332E-5 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  172. A67L7332E-6 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  173. A67L7336 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  174. A67L73361 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  175. A67L73361E-10 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  176. A67L73361E-11 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  177. A67L73361E-12 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  178. A67L73361E-7.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  179. A67L73361E-8.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  180. A67L7336E - SRAM High Speed Synchronous 4Mb X32
  181. A67L7336E-2.6 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  182. A67L7336E-2.6F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  183. A67L7336E-2.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  184. A67L7336E-2.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  185. A67L7336E-3.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  186. A67L7336E-3.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  187. A67L7336E-3.5 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  188. A67L7336E-3.5F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  189. A67L7336E-3.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  190. A67L7336E-3.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  191. A67L7336E-4 - Cycle Time:7ns; Access Time:4ns; 128K X 32 Lvttl, Pipelined Dba SRAM
  192. A67L7336E-4.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  193. A67L7336E-4.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  194. A67L7336E-45 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  195. A67L7336E-5 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  196. A67L7336E-6 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  197. A67L8316 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  198. A67L83161 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  199. A67L83161E-10 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  200. A67L83161E-11 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  201. A67L83161E-12 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  202. A67L8316E - SRAM High Speed Synchronous 4Mb X16
  203. A67L8316E-4 - Cycle Time:7ns; Access Time:4ns; 256K X 16 Lvttl, Pipelined Dba SRAM
  204. A67L8316E-4.2 - Cycle Time:7ns; Access Time:4.2ns; 256K X 16 Lvttl, Pipelined Dba SRAM
  205. A67L8316E-45 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  206. A67L8316E-5 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  207. A67L8316E-6 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  208. A67L8318 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  209. A67L83181 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  210. A67L83181E-10 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  211. A67L83181E-10.0 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  212. A67L83181E-10.0F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  213. A67L83181E-11 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  214. A67L83181E-12 - 256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
  215. A67L83181E-7.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  216. A67L83181E-7.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  217. A67L83181E-8.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  218. A67L83181E-8.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L83181, A67L73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  219. A67L8318E-2.6 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  220. A67L8318E-2.6F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  221. A67L8318E-2.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  222. A67L8318E-2.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  223. A67L8318E-3.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  224. A67L8318E-3.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  225. A67L8318E-3.5F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  226. A67L8318E-3.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  227. A67L8318E-3.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  228. A67L8318E-4 - Cycle Time:7ns; Access Time:4ns; 256K X 16 Lvttl, Pipelined Dba SRAM
  229. A67L8318E-4.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  230. A67L8318E-4.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L8318, A67L7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  231. A67L8318E-45 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  232. A67L8318E-5 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  233. A67L8318E-6 - 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM
  234. A67L8336 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L9318, A67L8336 SRAMs integrateA 512K X 18,256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  235. A67L83361E - 512k X 18, 256k X 36 Lvttl, Flow-through Zebl Sram
  236. A67L83361E-10.0 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  237. A67L83361E-10.0F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  238. A67L83361E-7.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  239. A67L83361E-7.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  240. A67L83361E-8.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  241. A67L83361E-8.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  242. A67L8336E - 512k X 18, 256k X 36 Lvttl, Pipelined Zebl Sram
  243. A67L8336E-2.6 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  244. A67L8336E-2.6F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  245. A67L8336E-2.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  246. A67L8336E-2.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  247. A67L8336E-3.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  248. A67L8336E-3.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  249. A67L8336E-3.5 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  250. A67L8336E-3.5F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  251. A67L8336E-3.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  252. A67L8336E-3.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  253. A67L8336E-4.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  254. A67L8336E-4.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  255. A67L9318 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  256. A67L93181 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  257. A67L93181E - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  258. A67L93181E-10.0 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  259. A67L93181E-10.0F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  260. A67L93181E-7.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  261. A67L93181E-7.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  262. A67L93181E-8.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  263. A67L93181E-8.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
  264. A67L9318E - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  265. A67L9318E-2.6 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  266. A67L9318E-2.6F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  267. A67L9318E-2.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  268. A67L9318E-2.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  269. A67L9318E-3.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  270. A67L9318E-3.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  271. A67L9318E-3.5 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  272. A67L9318E-3.5F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  273. A67L9318E-3.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  274. A67L9318E-3.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  275. A67L9318E-4.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  276. A67L9318E-4.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  277. A67L9336 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  278. A67L93361 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67L06181, A67L93361 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all synchro
  279. A67L93361E - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  280. A67L93361E-10.0 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  281. A67L93361E-10.0F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  282. A67L93361E-7.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  283. A67L93361E-7.5F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  284. A67L93361E-8.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  285. A67L93361E-8.5F - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  286. A67L9336E - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  287. A67L9336E-2.6 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  288. A67L9336E-2.6F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  289. A67L9336E-2.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  290. A67L9336E-2.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  291. A67L9336E-3.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  292. A67L9336E-3.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  293. A67L9336E-3.5 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  294. A67L9336E-3.5F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  295. A67L9336E-3.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  296. A67L9336E-3.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  297. A67L9336E-4.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  298. A67L9336E-4.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  299. A67P0618 - 1m X 18, 512k X 36 Lvttl, Pipelined Zebl Sram
  300. A67P06181 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  301. A67P06181E - 1m X 18, 512k X 36 Lvttl, Flow-through Zebl Sram
  302. A67P06181E-6.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  303. A67P06181E-7.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  304. A67P06181E-8.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  305. A67P0618E - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  306. A67P0618E-2.6 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  307. A67P0618E-2.6F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  308. A67P0618E-2.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  309. A67P0618E-2.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  310. A67P0618E-3.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  311. A67P0618E-3.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  312. A67P0618E-3.5 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  313. A67P0618E-3.5F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  314. A67P0618E-3.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  315. A67P0618E-3.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  316. A67P0618E-4.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  317. A67P0618E-4.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  318. A67P0636 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  319. A67P06361 - 2m X 18, 1m X 36 Lvttl, Flow-through Zebl Sram
  320. A67P06361E - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  321. A67P06361E-6.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  322. A67P06361E-7.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  323. A67P06361E-8.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  324. A67P0636E - 2m X 18, 1m X 36 Lvttl, Pipelined Zebl Sram
  325. A67P0636E-2.6 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  326. A67P0636E-2.6F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  327. A67P0636E-2.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  328. A67P0636E-2.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  329. A67P0636E-3.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  330. A67P0636E-3.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  331. A67P0636E-3.5 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  332. A67P0636E-3.5F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  333. A67P0636E-3.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  334. A67P0636E-3.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  335. A67P0636E-4.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  336. A67P0636E-4.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  337. A67P1618 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  338. A67P16181-8.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  339. A67P16181E - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  340. A67P16181E-6.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  341. A67P16181E-7.5 - 2M X 18, 1M X 36 LVTTL, Flow-through ZeBL SRAM
  342. A67P1618E - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  343. A67P1618E-2.6 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  344. A67P1618E-2.6F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  345. A67P1618E-2.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  346. A67P1618E-2.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  347. A67P1618E-3.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  348. A67P1618E-3.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  349. A67P1618E-3.5 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  350. A67P1618E-3.5F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  351. A67P1618E-3.8 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  352. A67P1618E-3.8F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  353. A67P1618E-4.2 - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBL SRAM
  354. A67P1618E-4.2F - 2M X 18, 1M X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P1618, A67P0636 SRAMs integrateA 2M X 18, 1MX 36 SRAM core with advanced synchronous peripheralcircuitry andA 2-bit burst counter. These SRAMs areoptimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous inpu
  355. A67P73361 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  356. A67P73361E-7.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  357. A67P73361E-7.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  358. A67P73361E-8.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  359. A67P7336E-2.6 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  360. A67P7336E-2.6F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  361. A67P7336E-2.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  362. A67P7336E-2.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  363. A67P7336E-3.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  364. A67P7336E-3.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  365. A67P7336E-3.5 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  366. A67P7336E-3.5F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  367. A67P7336E-3.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  368. A67P7336E-3.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  369. A67P7336E-4.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  370. A67P7336E-4.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  371. A67P8318 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  372. A67P83181E-10.0 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  373. A67P83181E-10.0F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  374. A67P83181E-7.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  375. A67P83181E-7.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  376. A67P83181E-8.5 - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  377. A67P83181E-8.5F - 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P83181, A67P73361 SRAMs integrateA 256K X18, 128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  378. A67P8318E-2.6 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  379. A67P8318E-2.6F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  380. A67P8318E-2.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  381. A67P8318E-2.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  382. A67P8318E-3.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  383. A67P8318E-3.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  384. A67P8318E-3.5 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  385. A67P8318E-3.5F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  386. A67P8318E-3.8 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  387. A67P8318E-3.8F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  388. A67P8318E-4.2 - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  389. A67P8318E-4.2F - 256K X 18, 128K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P8318, A67P7336 SRAMs integrateA 256K X 18,128K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchron
  390. A67P8336 - 512k X 18, 256k X 36 Lvttl, Pipelined Zebl Sram
  391. A67P83361 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  392. A67P83361E-7.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  393. A67P83361E-7.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  394. A67P83361E-8.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  395. A67P8336E - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  396. A67P8336E-2.6 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  397. A67P8336E-2.6F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  398. A67P8336E-2.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  399. A67P8336E-2.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  400. A67P8336E-3.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  401. A67P8336E-3.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  402. A67P8336E-3.5 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  403. A67P8336E-3.5F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  404. A67P8336E-3.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  405. A67P8336E-3.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  406. A67P8336E-4.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  407. A67P8336E-4.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  408. A67P9318 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  409. A67P93181E-10.0 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  410. A67P93181E-10.0F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  411. A67P93181E-7.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  412. A67P93181E-7.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  413. A67P93181E-8.5 - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  414. A67P93181E-8.5F - 512K X 18, 256K X 36 LVTTL, Flow-through ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P93181, A67P83361 SRAMs integrateA 512K X18, 256K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK)controls all syn
  415. A67P9318E - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  416. A67P9318E-2.6 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  417. A67P9318E-2.6F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  418. A67P9318E-2.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  419. A67P9318E-2.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  420. A67P9318E-3.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  421. A67P9318E-3.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  422. A67P9318E-3.5 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  423. A67P9318E-3.5F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  424. A67P9318E-3.8 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  425. A67P9318E-3.8F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  426. A67P9318E-4.2 - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  427. A67P9318E-4.2F - 512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM
  428. A67P9336 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  429. A67P93361 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  430. A67P93361E - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  431. A67P93361E-6.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  432. A67P93361E-7.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  433. A67P93361E-8.5 - 1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
  434. A67P9336E - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  435. A67P9336E-2.6 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  436. A67P9336E-2.6F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  437. A67P9336E-2.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  438. A67P9336E-2.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  439. A67P9336E-3.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  440. A67P9336E-3.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  441. A67P9336E-3.5 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  442. A67P9336E-3.5F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  443. A67P9336E-3.8 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  444. A67P9336E-3.8F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  445. A67P9336E-4.2 - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBL SRAM
  446. A67P9336E-4.2F - 1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAMThe AMIC Zero Bus Latency (ZeBLTM) SRAM familyemploys high-speed, low-power CMOS designs using anadvanced CMOS process.The A67P0618, A67P9336 SRAMs integrateA 1M X 18,512K X 36 SRAM core with advanced synchronousperipheral circuitry andA 2-bit burst counter. These SRAMsare optimized for 100 percent bus utilization without theinsertion of any wait cycles during Write-Read alternation.The positive edge triggered single clock input (CLK) controlsall synchronous
  447. A7101 - 2.4GHz FSK TransceiverThe A7101 isA monolithic CMOS integrated circuitintended for use asA low cost FSK transceiver in wirelessapplications. The device is provided in 48-lead plasticQFN7X7 packaging and is designed to function as acomplete FSK transceiver. It is intended for wirelessapplications in the 2.4GHz to 2.5GHz ISM band. This chipfeaturesA fully programmable frequency synthesizer withintegrated VCO circuitry.
  448. A7121 - 2.4GHz FSK TransceiverA7121 isA monolithic CMOS integrated circuit for wirelessapplications in 2.4GHz ISM band. The device is providedinA 32-lead plastic QFN5X5 packaging and is designed asa complete GFSK transceiver up to 3Mbps data rate. Thechip featuresA fully programmable frequency synthesizerwith integrated VCO circuitry.
  449. A71P024P01Q - 2.4GHz FSK TransceiverThe A7101 isA monolithic CMOS integrated circuitintended for use asA low cost FSK transceiver in wirelessapplications. The device is provided in 48-lead plasticQFN7X7 packaging and is designed to function as acomplete FSK transceiver. It is intended for wirelessapplications in the 2.4GHz to 2.5GHz ISM band. This chipfeaturesA fully programmable frequency synthesizer withintegrated VCO circuitry.
  450. A7301 - 2,4GHz 64Kbps FSK RF TransmitterThe A7301 isA monolithic CMOS integrated circuitintended for use asA low cost FSK transmitter in wirelessapplications. The device is provided inA 32-lead plasticQFN5X5 packaging and is designed asA complete FSKtransmitter. It is intended for wireless applications in the2.4GHz to 2.5GHz ISM band. The chip featuresA fullyprogrammable frequency synthesizer with integrated VCOcircuitry.
  451. A7531 - Switch Matrix 4x2Features􀂄 4x2 Switch Matrix􀂄 Output Load Detector􀂄 Integrated 4 Bit Decoder􀂄 Single Positive Supply: VDD = +5V􀂄 Operating Frequency Range: 950MHz ~ 1450MHz􀂄 Isolation: 35dB (typical)
  452. A8032 - 8 Bit Microcontroller
  453. A8032-12 - 8 Bit Microcontroller
  454. A8032-24 - 8 Bit Microcontroller
  455. A8032-40 - 8 Bit Microcontroller
  456. A8032L-12 - 8 Bit Microcontroller
  457. A8032L-24 - 8 Bit Microcontroller
  458. A8032L-40 - 8 Bit Microcontroller
  459. A81L801 - Stacked Multi-chip Package (mcp) 1 M X 8 Bit / 512k X 16 Bit Boot Sector Flash Memory and 128k X 8 Low Voltage Cmos Sram
  460. A81L801TG-70 - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  461. A81L801TG-70F - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  462. A81L801TG-70I - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  463. A81L801TG-70IF - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  464. A81L801UG-70 - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  465. A81L801UG-70F - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  466. A81L801UG-70I - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  467. A81L801UG-70IF - Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
  468. A82DL1622 - Stacked Multi-chip Package (mcp) Flash Memory and Sram, A82dl16x2t(u) 16 Megabit (2mx8 Bit/1mx16 Bit) Cmos 3.3 Volt-only, Simultaneous Operation Flash
  469. A82DL1622TG-70 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  470. A82DL1622TG-70F - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  471. A82DL1622TG-70I - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  472. A82DL1622TG-70IF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  473. A82DL1622TG-70U - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  474. A82DL1622TG-70UF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  475. A82DL1622UG-70 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  476. A82DL1622UG-70F - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  477. A82DL1622UG-70I - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  478. A82DL1622UG-70IF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  479. A82DL1622UG-70U - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  480. A82DL1622UG-70UF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  481. A82DL1624 - Stacked Multi-chip Package (mcp) Flash Memory and Sram, A82dl16x4t(u) 16 Megabit (2mx8 Bit/1simultaneous Operation Flash Memory and 4m (256kx16 Bit) S
  482. A82DL1624TG-70 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  483. A82DL1624TG-70F - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  484. A82DL1624TG-70I - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  485. A82DL1624TG-70IF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  486. A82DL1624TG-70U - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  487. A82DL1624TG-70UF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  488. A82DL1624UG-70 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  489. A82DL1624UG-70F - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  490. A82DL1624UG-70I - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  491. A82DL1624UG-70IF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  492. A82DL1624UG-70U - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  493. A82DL1624UG-70UF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
  494. A82DL1632 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  495. A82DL1632TG-70 - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  496. A82DL1632TG-70F - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  497. A82DL1632TG-70I - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  498. A82DL1632TG-70IF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  499. A82DL1632TG-70U - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
  500. A82DL1632TG-70UF - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash