Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Dynamic dv/dt Rating
BV
DSS
600/675V
Repetitive Avalanche Rated
R
DS(ON)
0.75
Fast Switching
I
D
9A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.8
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data & specifications subject to change without notice
AP09N70P/R
Rating
600/675
9
40
156
9
5
305
1.25
-55 to 150
Parameter
200218032
Parameter
Linear Derating Factor
- /A
9
Storage Temperature Range
-55 to 150
AP09N70 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262
type provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,ruggedized
design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
S
30
G
D
S
TO-262(R)
G
D
S
TO-220(P)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA / -
600
-
-
V
V
GS
=0V, I
D
=1mA / A
675
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.6
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=4.5A
-
-
0.75
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=4.5A
-
4.5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=600V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=9A
-
44
-
nC
Q
gs
Gate-Source Charge
V
DS
=480V
-
11
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
12
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=300V
-
19
-
ns
t
r
Rise Time
I
D
=9A
-
21
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
56
-
ns
t
f
Fall Time
R
D
=34
-
24
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
2660
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
170
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
-
-
9
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
40
A
V
SD
Forward On Voltage
3
T
j
=25
, I
S
=9A, V
GS
=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=6.8mH , R
G
=25
, I
AS
=9A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP09N70P(/R)-
X
: X Denote BV
DSS
Grade
Blank = BV
DSS
600V
A
= BV
DSS
675V
AP09N70P/R
100
30V
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
AP09N70P/R
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
B
V
DS
S
(V
)
0
2
4
6
8
10
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
V
G
=4.0V
V
G
=3.5V
V
G
=10V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
No
rma
l
i
z
e
d
R
DS
(
ON)
V
G
=10V
I
D
=4.5A
0
2
4
6
8
10
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
G
=6.0V
V
G
=5.0V
V
G
=4.5V
V
G
=4.0V
V
G
=3.5V
V
G
=10V
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP09N70P/R
0
1
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
T
c
, Case Temperature ( C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
50
100
150
0
50
100
150
Tc , Case Temperature(
o
C)
P
D
(W
)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
0.1
1
10
100
1
10
100
1000
10000
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP09N70P/R
0
1
2
3
4
5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS
(
t
h
)
(V
)
0
2
4
6
8
10
12
14
16
0
10
20
30
40
50
60
70
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=9A
V
DS
=320V
V
DS
=400V
V
DS
=480V
1
100
10000
1
5
9
13
17
21
25
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
(V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
AP09N70P/R
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
V
DS
V
GS
R
G
R
D
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
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