AP1250GM / AP1250GH
1.5A / 3A Bus Termination Regulator
General Description
Features
Ideal for DDR-I and DDR-II applications
Capable of sourcing and sinking current 1.5A/3A
Current limiting protection
Thermal protection
Current-shoot-through protection
High accuracy output voltage at full load
Minimum external components
Adjustable V
OUT
by external resistors
Shutdown for standby or suspend mode operation with high-impedance output
Block Diagram
Data and specifications subject to change without notice
200807035,1/5
Pb Free Plating Product
AP1250GM/H is a linear regulator designed as a cost-effective solution for active
termination of DDR SDRAM. The converting voltage range is from 1.6V to 6V into a
desired output voltage, which is adjusted by two external resistors. The current
sourcing and sinking capability of the regulator is up to 1.5A/3A while the output
voltage within 2%/3%.
This device provides on-chip thermal shutdown and current limit functions for circuit
tolerance of the output fault conditions. SO-8 and TO-252-5L packages are available
for all commercial and industrial surface mount applications.
VCNTL
VIN
Current limiting
sensor
Thermal
CNTL
VOUT
GND
VREFEN
Advanced Power
Electronics Corp,
Applications
Mother Board DDR-SDRAM Termination
Mother Board DDR-II Termination
Game / Play Station
Set Top Box
PCI / AGP Graphics
IPC
SCSI-III Bus Termination
Pin Configuration
Part No. AP1250GM (SO-8 package)
Part No. AP1250GH (TO-252-5L package)
Pin Description
Pin Name
Function
VIN
Power Input
GND
Ground
VCNTL
Gate Drive Voltage
VREFEN
Reference Voltage Input and Chip Enable
VOUT
Output Voltage
Data and specifications subject to change without notice
2/5
AP1250GM / AP1250GH
VIN
GND
VREFEN
VOUT
VCNTL
VCNTL
VCNTL
VCNTL
1 2 3 4 5
1. VIN
2. GND
3. VCNTL(TAB)
4. VREFEN
5. VOUT
AP1250GM / AP1250GH
Absolute Maximum Ratings
Power
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6V
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internal limited
HBM
(6' 5DWLQJ
3KV
6WRUDJH 7HPSHUDWXUH 5DQJH
-55
to 150
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260
62 7KHUPDO 5HVLVWDQFH
5
WKMF
20
/W
62 7KHUPDO 5HVLVWDQFH 5
WKMD
80
/W
72/ 7KHUPDO 5HVLVWDQFH 5
WKMF
6
/W
72/ 7KHUPDO 5HVLVWDQFH 5
WKMD
40
/W
Electrical Characteristics @ T
A
= 25
( unless otherwise specified )
V
IN
= +2.5V, V
CNTL
= +3.3V, V
REFEN
= +1.25V, C
OUT
= 10uF(Ceramic)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
OS
Output Offset Voltage
1
I
OUT
= 0A
-20
-5
20
mV
|
V
LOAD
|
Load Regulation
I
L
: 0 --> 1.5A
--
0.5
2
%
I
L
: 0 --> - 1.5A
--
0.5
2
%
V
IN
Input Voltage Range(DDR I/II)
2
V
CNTL
>= V
IN
1.6
2.5/1.8
--
V
V
CNTL
Gate Drive Voltage Range
2
V
CNTL
>= V
IN
--
3.3
6
V
I
SHDN
Current in Shutdown
V
REFEN
< 0.2V,R
L
=180
--
10
90
uA
Short Circuit Protection
I
LIMIT
Current Limit
AP1250M
--
2
--
A
AP1250H
--
3
--
A
Iq
Quiescent Current
I
OUT
= 0A
--
1
3
mA
Over Temperature Protection
T
OS
Thermal Shutdown Temperature
3.3V
V
CNTL
5V
--
140
--
Shutdown Function
Shutdown Threshold Trigger
Output = High
0.8
--
--
V
Shutdown Threshold Trigger
Output = Low
--
--
0.2
V
Notes:
1.V
OS
is the voltage measurement V
OUT
subtracted from V
REFEN
.
2.Keep V
CNTL
>= V
IN
at power on/off sequences.
3.Surface mounted on 1 in
2
copper pad of
FR4 board
Data and specifications subject to change without notice
3/5
AP1250GM / AP1250GH
Typical Performance Characteristics
Fig 1. Line Regulation( V
IN
vs. V
OUT
)
Fig 2. Line Regulation( V
CNTL
vs. V
OUT
)
Fig 3. Output Short-Circuit Protection
Fig 4. Output Short-Circuit Protection
Data and specifications subject to change without notice
4/5
1.2
1.225
1.25
1.275
1.5
1.7
1.9
2.1
2.3
2.5
V
IN
(V)
V
OU
T
(V)
V
CNTL
= 3.3V
T
A
= 25
1.2
1.225
1.25
1.275
2.5
3
3.5
4
4.5
5
5.5
6
V
CNTL
(V)
V
OU
T
(V)
V
IN
= 1.25V
T
A
= 25
V
IN
= 2.5V
V
CNTL
= 3.3V
V
REFEN
= 1.25V
Time(200us/DIV)
I
L
(2
.0
A/D
I
V)
Source
V
IN
= 2.5V
V
CNTL
= 3.3V
V
REFEN
= 1.25V
Time(200us/DIV)
I
L
(2
.0
A/D
I
V)
Sink
AP1250GM / AP1250GH
Typical Performance Characteristics
Fig 5. Transient Response
Fig 6. Transient Response
Fig 7. Safe Operating Area
Data and specifications subject to change without notice
5/5
Time(200us/DIV)
I
L
(0.
5
A
/
DI
V
)
V
IN
= 2.5V
V
CNTL
= 3.3V
I
L
=1.5A
f=1KHz
V
OU
T
(100m
V
/
DI
V
)
Source
V
IN
= 2.5V
V
CNTL
= 3.3V
I
L
=-1.5A
f=1KHz
I
L
(0.
5
A
/
DI
V
)
V
OU
T
(100m
V
/
DI
V
)
Sink
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
I
L
(A)
Duty (
%
)
V
IN
= 2.5V
V
CNTL
= 3.3V
f=1KHz
Tc = 80
100
120
Time(200us/DIV)
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