Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Gate Drive
BV
DSS
20V
Small Package Outline
R
DS(ON)
600m
2KV ESD Rating(Per MIL-STD-883D)
I
D
600mA
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Unit
V
DS
V
V
GS
V
I
D
@T
A
=25
mA
I
D
@T
A
=70
mA
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
360
/W
Data and specifications subject to change without notice
AP1332GEU
Parameter
Rating
Pb Free Plating Product
Drain-Source Voltage
20
Gate-Source Voltage
6
Continuous Drain Current
3
600
Continuous Drain Current
3
470
Pulsed Drain Current
1,2
2.5
Total Power Dissipation
0.35
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.003
Storage Temperature Range
Thermal Data
Parameter
200606051-1/4
D
G
S
SOT-323
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=600mA
-
-
600
m
V
GS
=2.5V, I
D
=400mA
-
-
850
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=600mA
-
1
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V ,V
GS
=0V
-
-
10
uA
I
GSS
Gate-Source Leakage
V
GS
=6V
-
-
10
uA
Q
g
Total Gate Charge
2
I
D
=600mA
-
1.3
2
nC
Q
gs
Gate-Source Charge
V
DS
=16V
-
0.3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
0.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
21
-
ns
t
r
Rise Time
I
D
=600mA
-
53
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=5V
-
100
-
ns
t
f
Fall Time
R
D
=16.7
-
125
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
38
60
pF
C
oss
Output Capacitance
V
DS
=10V
-
17
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
12
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
SD
Forward On Voltage
2
I
S
=300mA, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t
10 sec.
AP1332GEU
2/4
AP1332GEU
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=0.6A
V
G
=4.5V
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0.0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
200
400
600
800
1000
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 0.4 A
T
A
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP1332GEU
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=0.6A
V
DS
=10V
V
DS
=12V
V
DS
=16V
10
100
1
3
5
7
9
11
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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