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Электронный компонент: AP2305AN

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Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
-30V
Small Package Outline
R
DS(ON)
80m
Surface Mount Device
I
D
- 3.2A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
-55 to 150
Linear Derating Factor
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
1.38
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-2.6
Pulsed Drain Current
1,2
-10
200731031
AP2305AN
Rating
- 30
12
-3.2
0.01
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2305AN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-3.2A
-
-
60
m
V
GS
=-4.5V, I
D
=-3.0A
-
-
80
m
V
GS
=-2.5V, I
D
=-2.0A
-
-
150
m
V
GS
=-1.8V, I
D
=-1.0A
-
-
250
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-1.2
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-3.0A
-
9
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-3.2A
-
10
18
nC
Q
gs
Gate-Source Charge
V
DS
=-24V
-
1.8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
3.6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
7
-
ns
t
r
Rise Time
I
D
=-3.2A
-
15
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
21
-
ns
t
f
Fall Time
R
D
=4.6
-
15
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
735
1325
pF
C
oss
Output Capacitance
V
DS
=-25V
-
100
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
trr
Reverse Recovery Time
I
S
=-3.2A, V
GS
=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
12V
100
AP2305AN
65m
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
= -3.0A
V
GS
= -4.5V
0
10
20
30
40
0
1
2
3
4
5
6
7
8
9
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
-4.0V
T
A
=25
o
C
-5.0V
-3.0V
V
G
= -2.0V
0
4
8
12
16
20
24
28
32
36
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
V
G
= -2.0V
-4.0V
-5.0V
-3.0V
T
A
= 1 5 0
o
C
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(
t
h)
(V)
0
100
200
300
0
2
4
6
8
10
12
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
= -1.0A
T
A
=25
o
C
AP2305AN
65m
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A)
T
A
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
t
T
Rthja = 270
/W
10
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
= -3.2A
V
DS
= -24V