Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
-16V
Small Package Outline
R
DS(ON)
60m
Surface Mount Device
I
D
- 4A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
200414041
AP2307N
Rating
-16
8
-4
0.01
1.38
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1
-12
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2307N
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-16
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V, I
D
=-4A
-
-
60
m
V
GS
=-2.5V, I
D
=-3.0A
-
-
70
m
V
GS
=-1.8V, I
D
=-2.0A
-
-
90
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-
-
-1.0
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-4A
-
12
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-16V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-12V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=8V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
15
24
nC
Q
gs
Gate-Source Charge
V
DS
=-12V
-
1.3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
8
-
ns
t
r
Rise Time
I
D
=-1A
-
11
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
54
-
ns
t
f
Fall Time
R
D
=10
-
36
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
985
1580
pF
C
oss
Output Capacitance
V
DS
=-15V
-
180
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
I
S
=-4A, V
GS
=0V,
-
39
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
100
AP2307N
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
2
4
6
8
10
12
14
16
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
A
=25
o
C
V
G
= - 1.8 V
-5.0V
-4.5V
-3.0V
-2.5V
0
2
4
6
8
10
12
14
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
A
= 150
o
C
V
G
= - 1.8 V
-5.0V
-4.5V
-3.0V
-2.5V
40
50
60
70
1
3
5
7
9
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(
)
I
D
=-3A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
= - 4 A
V
G
= -4.5V
0
1
2
3
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
-
V
GS(
t
h)
(V)
AP2307N
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
0
2
4
6
8
0
8
16
24
32
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=-4A
V
DS
=-16V
100
1000
10000
1
5
9
13
17
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
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