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Электронный компонент: AP2451GY

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Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Capable of 2.5V gate drive
N-CH BV
DSS
20V
Lower on-resistance
R
DS(ON)
37m
Surface mount package
I
D
5A
P-CH BV
DSS
-20V
R
DS(ON)
75m
Description
I
D
-3.7A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
V
DS
Drain-Source Voltage
20
-20
V
V
GS
Gate-Source Voltage
12
12
V
I
D
@T
A
=25
Continuous Drain Current
3
5
-3.7
A
I
D
@T
A
=70
Continuous Drain Current
3
4
-3
A
I
DM
Pulsed Drain Current
1
20
-20
A
P
D
@T
A
=25
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Parameter
200119051
Thermal Data
AP2451GY
Pb Free Plating Product
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G2
D2
S2
G1
D1
S1
2928-8
D1
D2
D1
D2
G2
G1
S2
S1
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=6A
-
-
32
m
V
GS
=4.5V, I
D
=5A
-
-
37
m
V
GS
=2.5V, I
D
=3A
-
-
55
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=5A
-
13
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V, V
GS
=0V
-
-
10
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=5A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=16V
-
1.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
9
-
ns
t
r
Rise Time
I
D
=1A
-
10
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
16
-
ns
t
f
Fall Time
R
D
=10
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
620
990
pF
C
oss
Output Capacitance
V
DS
=20V
-
120
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.2A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=5A, V
GS
=0V
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
11
-
nC
AP2451GY
AP2451GY
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-4A
-
-
57
m
V
GS
=-4.5V, I
D
=-3A
-
-
75
m
V
GS
=-2.5V, I
D
=-1A
-
-
105
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-1.2
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-3A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V ,V
GS
=0V
-
-
-10
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-3A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=-16V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
10
-
ns
t
r
Rise Time
I
D
=-1A
-
16
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-5V
-
26
-
ns
t
f
Fall Time
R
D
=10
-
16
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
740
1180
pF
C
oss
Output Capacitance
V
DS
=-20V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
R
g
Gate Resistance
f=1.0MHz
-
6.6
10
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
I
S
=3A, V
GS
=0V,
-
29
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <5sec ; 155
/W at steady state.
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP2451GY
0
4
8
12
16
20
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
5.0 V
4.5 V
3.5 V
2.5 V
V
G
= 1.5 V
0
4
8
12
16
20
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
V
G
= 1.5 V
5.0 V
4.5 V
3.5 V
2.5 V
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=5A
V
G
=4.5V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
25
30
35
40
45
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m



)
I
D
=3A
T
A
=25
o
C
AP2451GY
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
= 5 A
V
DS
= 16 V
10
100
1000
1
5
9
13
17
21
25
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
10
20
30
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=155
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse