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Электронный компонент: AP2732GK

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
30V
Lower Gate Charge
R
DS(ON)
26m
Fast Switching Characteristic
I
D
8.6A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
45
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Continuous Drain Current
3
6.8
Pulsed Drain Current
1
30
Gate-Source Voltage
20
Continuous Drain Current
3
8.6
Parameter
Rating
Drain-Source Voltage
30
Pb Free Plating Product
200526051-1/4
AP2732GK
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
D
D
S
G
SOT-223
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
-
-
26
m
V
GS
=4.5V, I
D
=5A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=8A
-
11
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=8A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=1A
-
6
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=5V
-
18
-
ns
t
f
Fall Time
R
D
=15
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
600
960
pF
C
oss
Output Capacitance
V
DS
=25V
-
150
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.7
2.6
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=2.1A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=8A,
V
GS
=0
V
,
-
19
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP2732GK
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 120 /W when mounted on Min. copper pad.
AP2732GK
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
10
20
30
40
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
40
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
= 8 A
V
G
=10V
0.2
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
N
o
rmalize
d
V
GS(t
h)
(V
)
15
35
55
75
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 5 A
T
A
=25
o
C
0
2
4
6
8
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP2732GK
0
4
8
12
16
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=8A
V
DS
=15V
V
DS
=20V
V
DS
=25V
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
0
10
20
30
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse