Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
100% Avalanche Test
BV
DSS
250V
Simple Drive Requirement
R
DS(ON)
68m
Lower On-resistance
I
D
36A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
E
AS
Single Pulse Avalanche Energy
3
mJ
I
AR
Avalanche Current
A
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.6
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
/W
Data and specifications subject to change without notice
200916052-1/4
AP30N30W
Pb Free Plating Product
450
30
Parameter
Rating
Drain-Source Voltage
250
Gate-Source Voltage
30
Continuous Drain Current, V
GS
@ 10V
36
Continuous Drain Current, V
GS
@ 10V
23
Pulsed Drain Current
1
144
Total Power Dissipation
208
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.7
Thermal Data
Parameter
Storage Temperature Range
G
D
S
G
D
S
TO-3P
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
250
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.24
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=15A
-
-
68
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1.5
-
3.5
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=15A
-
23
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=250V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=200V ,V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
= 30V
-
-
1
uA
Q
g
Total Gate Charge
2
I
D
=15A
-
63
100
nC
Q
gs
Gate-Source Charge
V
DS
=200V
-
19
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
14
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=125V
-
28
-
ns
t
r
Rise Time
I
D
=15A
-
36
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10,V
GS
=10V
-
84
-
ns
t
f
Fall Time
R
D
=8.3
-
45
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
4290 6900
pF
C
oss
Output Capacitance
V
DS
=25V
-
550
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
6
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.9
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
V
SD
Forward On Voltage
2
I
S
=36A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
2
I
S
=15A, V
GS
=0V
-
235
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
2.24
-
C
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25 , I
AS
=30A.
2/4
AP30N30W
AP30N30W
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
10
20
30
40
50
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
= 25
o
C
10V
7.0V
6.0V
5.0V
V
G
=4. 5 V
0
10
20
30
40
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
= 150
o
C
V
G
=4. 5 V
10V
7.0V
6.0V
5.0V
40
80
120
160
2
4
6
8
10
V
GS
Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
=15A
T
C
=25
o
C
0.3
0.8
1.3
1.8
2.3
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=15A
V
G
=10V
0
3
6
9
12
15
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP30N30W
0
4
8
12
16
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
V
DS
= 120 V
V
DS
= 160 V
V
DS
= 200 V
I
D
= 15 A
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
1
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
40
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
PDF 
ZIP