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Электронный компонент: AP3403H

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Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
-30V
Simple Drive Requirement
R
DS(ON)
200m
Fast Switching
I
D
- 10A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
3.4
/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
36.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.29
Storage Temperature Range
Continuous Drain Current
-8.6
Pulsed Drain Current
1
-48
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
200505031
AP3403H/J
Rating
- 30
20
-10
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is universally used for all commercial-
industrial application.
G
D
S
G D
S
TO-252(H)
G
D
S
TO-251(J)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-6A
-
-
200
m
V
GS
=-4.5V, I
D
=-4A
-
-
400
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-6A
-
2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-6A
-
3.8
-
nC
Q
gs
Gate-Source Charge
V
DS
=-15V
-
1.7
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
1.6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
6.7
-
ns
t
r
Rise Time
I
D
=-6A
-
20.8
-
ns
t
d(off)
Turn-off Delay Time
R
G
=2
,
V
GS
=-10V
-
14.9
-
ns
t
f
Fall Time
R
D
=2.5
-
4.4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
217
-
pF
C
oss
Output Capacitance
V
DS
=-25V
-
103
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
31
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.25A, V
GS
=0V
-
-
-1.2
V
trr
Reverse Recovery Time
I
S
=-6A, V
GS
=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP3403H/J
20V
100
AP3403H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
2
4
6
8
10
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
C
=150
o
C
V
G
=-4.0V
-6.0V
-8.0V
-10V
-5.0V
100
150
200
250
3
4
5
6
7
8
9
10
11
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
=-10A
T
c
=25
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
V
G
= -10V
I
D
=-10A
0
2
4
6
8
10
12
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
C
=25
o
C
-10V
-8.0V
-6.0V
V
G
=-4.0V
-5.0V
0
0
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(
t
h)
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig11. Switching Time Circuit
Fig 12. Gate Charge Circuit
AP3403H/J
10
100
1000
1
5
9
13
17
21
25
29
-V
DS ,
Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
D
G
S
V
DS
V
GS
I
D
I
G
-1~-3mA
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
-10 V
D
G
S
V
DS
V
GS
R
G
R
D
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=-10A
V
DS
=-24V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
1
10
100
1
10
100
V
DS
(V)
-I
D
(A)
T
c
=25
o
C
Single Pulse
DC
1ms
10ms
100ms