Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Lower On-resistance
BV
DSS
-30V
Simple Drive Requirement
R
DS(ON)
28m
Fast Switching Characteristic
I
D
-30A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
200407062-1/4
AP40P03GI
Rating
-30
20
-30
0.25
Pb Free Plating Product
Continuous Drain Current, V
GS
@ 10V
-18
Pulsed Drain Current
1
-120
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
31.3
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
G
D
S
G
D
S
TO-220CFM(I)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
AP40P03GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-18A
-
-
28
m
V
GS
=-4.5V, I
D
=-10A
-
-
50
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-18A
-
21
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-18A
-
15
24
nC
Q
gs
Gate-Source Charge
V
DS
=-25V
-
3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
10
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
10
-
ns
t
r
Rise Time
I
D
=-18A
-
48
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-10V
-
31
-
ns
t
f
Fall Time
R
D
=0.8
-
66
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
910
1460
pF
C
oss
Output Capacitance
V
DS
=-25V
-
300
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
R
g
Gate Resistance
f=1.0MHz
-
11
17
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-18A, V
GS
=0V
-
-
-1.3
V
t
rr
Reverse Recovery Time
2
I
S
=-18A, V
GS
=0V,
-
30
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/s
-
25
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40P03GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
18
28
38
48
58
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= -10 A
T
C
=25
0
20
40
60
80
100
120
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
A
= 25
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
I
D
=- 18 A
V
G
=-10V
0
3
6
9
12
15
18
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
-
V
GS(
t
h)
(V)
0
20
40
60
80
100
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
A
= 1 5 0
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP40P03GI
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
0
5
10
15
20
25
30
Q
G
, Total Gate Charge (nC)
-V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
V
DS
=- 25 V
I
D
=-1 8 A
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
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