Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
30V
Single Drive Requirement
R
DS(ON)
25m
Lower On-resistance
I
D
28A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=100
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.2
Continuous Drain Current, V
GS
@ 10V
18
Pulsed Drain Current
1
95
Gate-Source Voltage
25
Continuous Drain Current, V
GS
@ 10V
28
Parameter
Rating
Drain-Source Voltage
30
201121051-1/4
AP40T03GI
Pb Free Plating Product
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
G D
S
TO-220CFM(I)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=18A
-
-
25
m
V
GS
=4.5V, I
D
=14A
-
-
45
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=18A
-
16
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 25V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=18A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
7
-
ns
t
r
Rise Time
I
D
=18A
-
56
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
16
-
ns
t
f
Fall Time
R
D
=0.83
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
610
980
pF
C
oss
Output Capacitance
V
DS
=25V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
117
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.5
2.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
V
SD
Forward On Voltage
2
I
S
=18A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=14A, V
GS
=20V
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40T03GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP40T03GI
0
20
40
60
80
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
10V
7 .0V
5 .0V
4.5V
V
G
=3.0V
0
20
40
60
80
100
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
7 .0V
5 .0V
4.5V
V
G
= 3 . 0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=18A
V
G
=10V
0
2
4
6
8
10
12
14
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
N
o
rmalize
d
V
GS(t
h)
(V
)
15
30
45
60
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
=14A
T
A
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP40T03GI
0
1
10
100
1000
0.1
1
10
100
V
DS
,Drain-to-Source Voltage (V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=18A
V
DS
=15V
V
DS
=20V
V
DS
=25V
100
1000
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
10
20
30
40
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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