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Электронный компонент: AP4501SSD

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Advanced Power
N with Schottky AND P-CHANNEL
Electronics Corp.
ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
30V
Low On-resistance
R
DS(ON)
36m
Fast Switching
I
D
5.3A
P-CH BV
DSS
-30V
R
DS(ON)
60m
Description
I
D
-4.2A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
-30
V
V
GS
Gate-Source Voltage
20
V
I
D
@T
A
=25
Continuous Drain Current
3
-4.2
A
I
D
@T
A
=70
Continuous Drain Current
3
-3.5
A
I
DM
Pulsed Drain Current
1
-30
A
P
D
@T
A
=25
Total Power Dissipation
W
Linear Derating Factor
W/
T
STG
Storage Temperature Range
T
J
Operating Junction Temperature Range
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
-55 to 125
0.016
-55 to 150
4.3
40
2
Parameter
200221031
AP4501SSD
Thermal Data
30
20
5.3
The Advanced Power MOSFETs from APEC provide the
design with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
AP4501SSD included N , P channel enhancement mode
power MOSFET and Shottky diode.
D1
D1
D2
D2
S1/A
G1
S2
G2
PDIP-8
G2
D2
S2
G1
D1
S1
K
A
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.031
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=5.3A
-
-
36
m
V
GS
=4.5V, I
D
=4A
-
-
55
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=5.3A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
4
V
DS
=30V, V
GS
=0V
-
-
100
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
1
mA
I
GSS
Gate-Source Leakage
V
GS
=20V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=5.3A
-
8.2
-
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
2.3
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4.8
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=1A
-
5.2
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
18.8
-
ns
t
f
Fall Time
R
D
=15
-
4.4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
645
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
150
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Source Current ( Body Diode )
2
V
D
=V
G
=0V , V
S
=1.2V
-
-
1.7
A
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
Schottky Characteristics@Tj=25
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
F
Forward Voltage Drop
I
F
=1A
-
-
0.5
V
I
rm
Maximum Reverse Leakage Current
Vr=30V
-
-
100
uA

AP4501SSD
100
AP4501SSD
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-4.2A
-
-
60
m
V
GS
=-4.5V, I
D
=-3A
-
-
80
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-4.2A
-
7.2
-
S
I
DSS
Drain-Source Leakage Current ( T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current ( T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-4.2A
-
9
-
nC
Q
gs
Gate-Source Charge
V
DS
=-15V
-
3.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
12
-
ns
t
r
Rise Time
I
D
=-1A
-
20
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-10V
-
45
-
ns
t
f
Fall Time
R
D
=15
-
27
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
760
-
pF
C
oss
Output Capacitance
V
DS
=-25V
-
330
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Source Current ( Body Diode )
2
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-1.7
A
V
SD
Forward On Voltage
2
I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
2
copper pad of
FR4 board ; 90
/W when mounted on Min. copper pad.
4.I
DSS
is the leakage current measurement combined with Schottky diode.
20V
100
20V
100
20V
AP4501SSD
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
40
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4. 0 V
0.2
0.8
1.4
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
= 5 . 3 A
V
GS
= 10V
10
40
70
100
2
5
8
11
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m



)
I
D
=5.3A
T
A
=25
0
12
24
36
0
2
3
5
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4.0V
0.01
0.1
1
10
100
0
0.4
0.8
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
A
=150
o
C
T
A
=25
o
C
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
AP4501SSD
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
a
liz
e
d
T
h
e
r
m
a
l Re
s
p
o
n
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS ,
Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
DC
0
3
6
9
12
0
4
8
12
16
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=5.3A
V
DS
=16V
V
DS
=20V
V
DS
=24V
10
100
1000
10000
1
7
13
19
25
31
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10V
D
G
S
V
DS
V
GS
R
G
R
D
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA