Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
20V
Low On-resistance
R
DS(ON)
35m
Fast Switching
I
D
6A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
A
=25
Continuous Drain Current
3
A
I
D
@T
A
=70
Continuous Drain Current
3
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
A
=25
Total Power Dissipation
W
Linear Derating Factor
W/
T
STG
Storage Temperature Range
T
J
Operating Junction Temperature Range
Symbol
Value
Unit
Rthj-amb
Max.
62.5
/W
Data and specifications subject to change without notice
Parameter
-55 to 150
6
4.8
35
AP4924M
Thermal Data
20
-55 to 150
Rating
2
0.016
Thermal Resistance Junction-ambient
3
Parameter
20020502
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
12
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=6A
-
-
35
m
V
GS
=2.5V, I
D
=5.2A
-
-
50
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=6A
-
18.5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=6A
-
9
-
nC
Q
gs
Gate-Source Charge
V
DS
=10V
-
1.8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4.2
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
6.5
-
ns
t
r
Rise Time
I
D
=1A
-
14
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=4.5V
-
20
-
ns
t
f
Fall Time
R
D
=10
-
15
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
300
-
pF
C
oss
Output Capacitance
V
DS
=8V
-
255
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V
-
-
1.67
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=1.7A, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 135
/W when mounted on Min. copper pad.
AP4924M
100
100
AP4924M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
4.5V
3.5V
3.0V
2.5V
V
GS
=2.0V
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
4.5V
3.5V
3.0V
2.5V
V
GS
=2.0V
20
25
30
35
40
45
2
3
4
5
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=6A
T
C
=25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=6A
V
GS
=4.5V
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4924M
0
1
2
3
4
5
6
7
8
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
0
1
2
3
0
50
100
150
T
c
,Case Temperature (
o
C)
P
D
(W
)
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
AP4924M
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
10
100
1000
1
5
9
13
17
21
25
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
o
ltage
(
V
)
I
D
=6A
V
DS
=10V
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
V
GS
(
t
h
)
(V
)
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