Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Lower Turn-on Voltage
BV
DSS
-16V
Simple Drive Requirement
R
DS(ON)
65m
Dual P MOSFET Package
I
D
-4.7A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Storage Temperature Range
Continuous Drain Current
3
-3.8
Pulsed Drain Current
1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pb Free Plating Product
200218051
AP4959GM
Rating
-16
8
-4.7
TThe Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
G2
D2
S2
G1
D1
S1
SO-8
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-16
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V, I
D
=-4A
-
-
65
m
V
GS
=-2.5V, I
D
=-3A
-
-
75
m
V
GS
=-1.8V, I
D
=-1A
-
-
100
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-
-
-1.0
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-4A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-16V, V
GS
=0V
-0.3
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-12V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=8V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
13
20
nC
Q
gs
Gate-Source Charge
V
DS
=-12V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
11
-
ns
t
r
Rise Time
I
D
=-1A
-
19
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-5V
-
38
-
ns
t
f
Fall Time
R
D
=10
-
22
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
920
1780
pF
C
oss
Output Capacitance
V
DS
=-15V
-
175
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.7A, V
GS
=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
/W when mounted on min. copper pad.
AP4959GM
AP4959GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Normalize
d
-V
GS(
t
h)
(V
)
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
=-4A
V
G
=-4.5V
0
3
6
9
12
15
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 25
o
C
-5.0V
-4.5V
-3.5V
-1.8V
V
G
= - 1. 0 V
30
90
150
210
270
330
0
1
2
3
4
5
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m
)
I
D
= -1 A
T
A
=25
o
C
0
3
6
9
12
15
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 150
o
C
-5.0V
-4.5V
-3.5V
-1.8V
V
G
= - 1. 0 V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP4959GM
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
T
A
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
100
1000
10000
1
5
9
13
17
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
10
20
30
40
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
= -4 A
V
DS
= - 1 2 V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
3
6
9
12
0
0.5
1
1.5
2
2.5
3
-V
GS
, Gate-to-Source Voltage (V)
-I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
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