Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Dynamic dv/dt Rating
BV
DSS
200V
Repetitive Avalanche Rated
R
DS(ON)
400m
Fast Switching
I
D
9A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
E
AS
mJ
I
AR
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.7
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data & specifications subject to change without notice
Operating Junction Temperature Range
-55 to 150
200219032
Parameter
9
7
Avalanche Current
Storage Temperature Range
-55 to 150
74
0.59
240
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
9
5.7
36
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
200
Drain-Source Voltage
Gate-Source Voltage
AP630P
Parameter
Rating
30
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630P) is available for low-profile
applications.
G
D
S
TO-220
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
200
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.248
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5A
-
-
400
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=5A
-
40
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=200V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=160V, V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Forward Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
= 9A
-
25
-
nC
Q
gs
Gate-Source Charge
V
DS
=160V
-
3.6
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
14
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=100V
-
8
-
ns
t
r
Rise Time
I
D
= 9A
-
26
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
34
-
ns
t
f
Fall Time
R
D
=11
-
22
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
515
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
90
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
9
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
36
A
V
SD
Forward On Voltage
3
Tj=25
, I
S
=9A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=4.5mH , R
G
=25
, I
AS
=9A.
3.Pulse width <300us , duty cycle <2%.
AP630P
30V
100
AP630P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
V
G
=10V
I
D
=5A
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
I
D
, D
r
a
i
n Cur
r
e
n
t (A)
T
C
=25
o
C
V
G
=7.0V
V
G
=6.0V
V
G
=5.0V
V
G
=4.0V
V
G
=8.0V
V
G
=10V
0
2
4
6
8
10
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
V
G
=7.0V
V
G
=6.0V
V
G
=5.0V
V
G
=4.0V
V
G
=8.0V
V
G
=10V
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j ,
Junction Temperature (
o
C )
No
rma
l
i
z
e
d
B
V
DS
S
(V
)
AP630P
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
20
40
60
80
0
50
100
150
Tc , Case Temperature (
o
C)
P
D
(W
)
0
2
4
6
8
10
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
1
10
100
1
10
100
1000
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
AP630P
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
1
100
10000
1
11
21
31
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
2
2.5
3
3.5
4
-50
0
50
100
150
T
j
Junction Temperayure (
o
C)
V
GS
(
t
h
)
(V
)
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=9A
V
DS
=80V
V
DS
=120V
V
DS
=160V
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