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Электронный компонент: AP90T03GR

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Lower On- resistance
BV
DSS
30V
Simple Drive Requirement
R
DS(ON)
4m
Fast Switching Characteristic
I
D
75A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@Tc=25
A
I
D
@Tc=100
A
I
DM
A
P
D
@Tc=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.3
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
200120041
AP90T03GR
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
20
Continuous Drain Current, V
GS
@4.5V
75
Continuous Drain Current, V
GS
@4.5V
63
Pulsed Drain Current
1
350
Total Power Dissipation
96
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Thermal Data
Parameter
Storage Temperature Range
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=45A
-
-
4
m
V
GS
=4.5V, I
D
=30A
-
-
6
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.8
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=30A
-
55
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=40A
-
60
96
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
8.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
38
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
14
-
ns
t
r
Rise Time
I
D
=30A
-
83
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
66
-
ns
t
f
Fall Time
R
D
=0.5
-
120
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
4090 6540
pF
C
oss
Output Capacitance
V
DS
=25V
-
1010
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=45A, V
GS
=0V
-
-
1.3
V
trr
Reverse Recovery Time
I
S
=30A, V
GS
=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
63
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP90T03GR
AP90T03GR
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
= 1 50
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
5
10
15
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, Source-to-Drain Voltage (V)
Is (
A
)
T
j
=25
o
C
T
j
=150
o
C
0
40
80
120
160
200
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= 45 A
V
G
=10V
0
0.5
1
1.5
2
-50
25
100
175
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V
)
3.5
4.0
4.5
5.0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
=20A
T
C
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP90T03GR
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
Voltage
(V)
V
DS
=15V
V
DS
=20V
V
DS
=24V
I
D
= 40 A
1
10
100
1000
0.1
1
10
100
V
DS
,Drain-to-Source Voltage (V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
The
r
mal Re
sponse
(
R
thjc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse