Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
30V
Capable of 2.5V gate drive
R
DS(ON)
28m
Optimal DC/DC battery application
I
D
4.9A
RoHS compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
/W
Data and specifications subject to change without notice
201103051-1/4
AP9920GEO
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
10
Drain Current
3
, V
GS
@ 4.5V
4.9
Drain Current
3
, V
GS
@ 4.5V
3.9
Pulsed Drain Current
1
20
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Thermal Data
Parameter
Storage Temperature Range
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=4A
-
-
27
m
V
GS
=4V, I
D
=4A
-
-
28
m
V
GS
=2.5V, I
D
=2A
-
-
36
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.3
-
1
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=4A
-
13
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=10V
-
-
30
uA
Q
g
Total Gate Charge
2
I
D
=4A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=25V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
8
-
ns
t
r
Rise Time
I
D
=1A
-
10
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=5V
-
23
-
ns
t
f
Fall Time
R
D
=15
-
7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
590
950
pF
C
oss
Output Capacitance
V
DS
=25V
-
110
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
R
g
Gate Resistance
f=1.0MHz
-
2.2
3.3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=0.8A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=4A,
V
GS
=0
V
,
-
27
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/s
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208/W when mounted on Min. copper pad.
2/4
AP9920GEO
AP9920GEO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
10
50
90
130
170
210
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 2A
T
A
=25
o
C
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
5.0 V
4.5 V
3.5 V
2.5 V
V
G
= 1.5 V
0
10
20
30
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=150
o
C
5.0 V
4.5 V
3.5 V
2.5 V
V
G
= 1.5 V
0.3
0.7
1.1
1.5
1.9
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
= 4A
V
G
= 4.5V
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9920GEO
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
t
T
0.02
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0.01
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
= 4 A
V
DS
=15V
V
DS
=20V
V
DS
=25V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
5
10
15
20
0
1
2
3
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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