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Электронный компонент: 5SDD51L2800

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ABB Semiconductors AG reserves the right to change specifications without notice.
V
RSM
=
2800 V
I
FAVM
=
5150 A
I
FRMS
=
8080 A
I
FSM
=
65 kA
V
F0
=
0.77 V
r
F
=
0.082 m
Doc. No. 5SYA1103-01 Sep. 01
Patented free-floating silicon technology
Very low on-state losses
High average and surge current.
Blocking
Part Number
5SDD 51L2800
5SDD 51L2600
5STP 51L2200
Conditions
V
RRM
2000 V
1850 V
1600 V
f = 50 Hz,
t
p
= 10ms
V
RSM
2800 V
2600 V
2200 V
t
p
= 10ms
V
RSM
3000 V
2800 V
2400 V
t
p
5ms
T
j
= 0-175C
I
RRM
400 mA
V
RRM
T
j
= 175C
T
vj
= -40C reduces V
RSM
and V
RRM
by 5%.
Mechanical data
nom.
70 kN
min.
63 kN
F
m
Mounting force
max.
77 kN
a
Acceleration
Device unclamped
Device clamped
100
m/s
2
m/s
2
D
p
Pole-piece diameter
78 mm
H
Housing thickness
27 mm
m
Weight IGCT
1.45 kg
D
s
Surface creepage distance
35 mm
D
a
Air strike distance
14 mm
Rectifier Diode
5SDD 51L2800
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01
page 2 of 5
On-state
I
FAVM
Max. average on-state
current
5150 A
I
FRMS
Max. RMS on-state current
8080 A
50 Hz, T
C
= 90C, Half sine wave
I
FSM
65 kA
tp
=
10 ms T
j
= 175C
Max. peak non-repetitive
surge current
70 kA
tp
=
8.3 ms After surge:
I
2
t
Limiting load integral
21125 kA
2
s
tp
=
10 ms V
R
= 0V
20335 kA
2
s
tp
=
8.3 ms
V
F
On-state voltage
1.18 V
I
F
=
5000 A
V
F0
Threshold voltage
0.77 V
I
F
=
2500 - 7500 A
T
j
= 175C
r
F
Slope resistance
0.082 m
Switching
Q
rr
Recovery charge
di
F
/dt = -10A/s
V
R
= 200 V
max
7000 As
I
FRM
= 4000A
T
j
= 175C
Thermal
T
jmax
Max. operating junction temperature
range
175 C
T
stg
Storage temperature range
-40...150 C
R
thJC
Thermal resistance
16 K/kW
Anode side cooled
junction to case
16 K/kW
Cathode side cooled
8 K/kW
Double side cooled
R
thCH
Thermal resistance case to
6 K/kW
Single side cooled
heat sink
3 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
3.5
3.5
1
i
(s)
1.0231
0.5199
0.016
Fig. 1 Transient thermal impedance junction to case.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01
page 3 of 5
On-state characteristic model:
IT
D
iT
C
iT
B
A
VT
+
+
+
+
=
)
1
ln(
Valid for i
T
= 0 30000 A
A
B
C
D
2.158
0.398
3.158
-3.626
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Fig. 4 On-state power losses vs average on-
state current.
Fig. 5 Max. permissible case temperature vs
average on-state current.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1103-01 Sep. 01
page 4 of 5
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5SDD 51L2800
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1103-01 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 8 Recovery charge vs. decay rate of on-
state current.
Fig. 9 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.