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Электронный компонент: 5SDF05D2501

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ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RRM
=
2500 V
I
FAVM
=
490 A
I
FSM
=
8.510
3
A
V
F0
=
1.4 V
r
F
=
0.52 m
V
DClink
=
1100 V
Fast Recovery Diode
5SDF 05D2501
Doc. No. 5SYA1112-03 Jan. 03



Patented free-floating silicon technology



Low switching losses



Optimized for use as snubber diode in GTO
converters



Industry standard press-pack ceramic housing,
hermetically cold-welded



Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetetive peak reverse voltage
V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= 125C
2500
V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (100% Duty)
1100
V
Permanent DC voltage for 100 FIT
failure rate
V
DClink
Ambient cosmic radiation at sea level in open
air. (5% Duty)
1500
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Repetitive peak reverse current
I
RRM
V
R
= V
RRM
, Tj = 125C
50
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
F
M
10
11
12
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
200
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Weight
m
0.25
kg
Housing thickness
H
26
mm
Pole-piece diameter
D
P
34
mm
Surface creepage distance
D
S
30
mm
Air strike distance
D
a
20
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SDF 05D2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03
page 2 of 5
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Max. average on-state
current
I
FAVM
Half sine wave, T
C
= 85 C
490
A
Max. RMS on-state current I
FRMS
770
A
Max. peak non-repetitive
surge current
I
FSM
8.510
3
A
Limiting load integral
I
2
t
t
p
= 10 ms, T
j
= 125C,
V
R
0 V
36010
3
A
2
s
Max. peak non-repetitive
surge current
I
FSM
2710
3
A
Limiting load integral
I
2
t
t
p
= 1 ms, T
j
= 125C,
V
R
0 V
37010
3
A
2
s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
On-state voltage
V
F
I
F
= 1000 A, T
j
= 125C
1.9
V
Threshold voltage
V
(T0)
1.4
V
Slope resistance
r
T
T
j
= 125C
I
T
= 600...4000 A
0.52
m
Turn-on
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Peak forward recovery
voltage
V
fr
di/dt = 500 A/s, T
j
= 125C
17
V
Turn-off
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Reverse recovery current
I
RM;
400
A
Reverse recovery charge
Q
rr
1150
C
Turn-off energy
E
rr
di/dt = 250 A/s, T
j
= 125 C,
I
F
= 1000 A, V
RM
= 2500 V,
R
S
= 5
, C
S
= 0.10 F
--
J
5SDF 05D2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03
page 3 of 5
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
T
vj
-40
125
C
Storage temperature range T
stg
-40
125
C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction
to case
R
th(j-c)
Double-side cooled
40
K/kW
R
th(j-c)A
Anode-side cooled
80
K/kW
R
th(j-c)C
Cathode-side cooled
80
K/kW
Thermal resistance case to
heatsink
R
th(c-h)
Double-side cooled
8
K/kW
R
th(c-h)
Single-side cooled
16
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
20.950
10.570
7.150
1.330
i
(s)
0.3960
0.0720
0.0090
0.0044
Fig. 1 Transient thermal impedance junction-to-
case.
1000
2000
3000
4000
5000
0
0
1
2
V (V)
F
3
4
I
F
(A)
25C
125C
max
typ
Linearization
with V
F0
= 1.40 V
and
= 0.52 m
r
F
20
30
40
10
0
400
100
200
300
0
0.1
1
10
t (ms)
p
100
I
FSM
(kA)
(10 A s)
3
2
I
FSM
i dt
2
Fig. 2 Forward current vs. forward voltage (typ. and
max. values) and linear approximation of max.
curve at 125C.
Fig. 3 Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
5SDF 05D2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1112-03 Jan. 03
page 4 of 5
Fig. 4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on di/dt
(max. values).
I
RM
Fig. 6 Typical current and voltage waveforms at turn-
off with conventional RC snubber circuit.
Fig. 7 Peak reverse recovery current vs. di
F
/dt,
I
F
= 1000 A; T
j
= T
jmax
, limit values
5SDF 05D2501
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Doc. No. 5SYA1112-03 Jan. 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abb.com/semiconductors
Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.