ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
4500 V
I
FAVM
=
810 A
I
FSM
=
24 kA
V
F0
=
2.42 V
r
F
=
1.1 m
V
DClink
=
2800 V
Doc. No. 5SYA1115-03 Sep. 01
Patented free-floating technology
Industry standard housing
Cosmic radiation withstand rating
Low on-state and switching losses
Optimized to use in snubberless operation
Blocking
V
RRM
Repetitive peak reverse voltage
4500 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
30 mA
V
R
= V
RRM,
T
j
= 115C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
2800 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
3200 V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
min.
42 kN
F
m
Mounting force
max.
46 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.83 kg
D
S
Surface creepage distance
30 mm
D
a
Air strike distance
20 mm
Fast Recovery Diode
5SDF 10H4502
PRELIMINARY
5SDF 10H4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1115-03 Sep. 01
page 2 of 5
On-state
(see Fig. 1, 2)
I
FAVM
Max. average on-state current
810 A
I
FRMS
Max. RMS on-state current
1270 A
Half sine wave, T
c
= 70C
I
FSM
Max. peak non-repetitive
24 kA
tp
=
10 ms
Before surge:
surge current
40 kA
tp =
1 ms
T
c
= T
j
= 115C
2.88
10
6
A
2
s
tp =
10 ms
After surge:
I
2
dt
Max. surge current integral
0.8
10
6
A
2
s
tp =
1 ms
V
R
0 V
V
F
Forward voltage drop
4.85 V
I
F
=
2200 A
V
F0
Threshold voltage
2.42 V
Approximation for
r
F
Slope resistance
1.1 m
I
F
= 400...3000
A
T
j
= 115C
Turn-on
(see Fig. 3, 4)
V
fr
Peak forward recovery voltage
370 V
di/dt = 1000 A/s, T
j
= 115C
Turn-off
di/dt
crit
Max. decay rate of on-state current
650 A/s I
F
= 2200 A,
T
j
= 115 C
V
Dclink
= 2800 V
I
rr
Reverse recovery current
1150 A
Q
rr
Reverse recovery charge
2200 C
E
rr
Turn-off energy
4.5 J
Thermal
T
j
Operating junction temperature range
-40...115C
T
stg
Storage temperature range
-40...125C
R
thJC
Thermal resistance junction to case
24 K/kW
Anode side cooled
24 K/kW
Cathode side cooled
12 K/kW
Double side cooled
R
thCH
Thermal resistance case to heatsink
6 K/kW
Single side cooled
F
m
=
42... 46 kN
3 K/kW
Double side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
5.64
2.01
0.74
0.40
i
(s)
0.524
0.0632
0.0065
0.0015
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
m
= 42... 46 kN Double side cooled
5SDF 10H4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1115-03 Sep. 01
page 3 of 5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
F
[V]
0
500
1000
1500
2000
2500
3000
3500
I
F
[A]
Tj = 115C
Fig. 1 Typical forward voltage waveform when
the diode is turned on with high di/dt.
Fig. 2 Forward current vs. forward voltage.
0
500
1000
1500
2000
2500
I
FQ
[A]
0
200
400
600
800
1000
1200
1400
I
rr
[A]
T
j
= 115C
di
F
/dt = 550 A/s
V
DClink
= 2700 V
0
500
1000
1500
2000
2500
I
FQ
[A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
rr
[J]
T
j
= 115C
di
F
/dt = 550 A/s
V
DClink
= 2700 V
Fig. 3 Diode reverse recovery current vs. turn-
off current.
Fig. 4 Diode turn-off energy per pulse vs. turn-
off current.
5SDF 10H4502
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1115-03 Sep. 01
page 4 of 5
0
1000
2000
3000
4000
V
DClink
[V]
0
500
1000
1500
2000
2500
3000
3500
I
FQ
[A]
T
j
= 0 - 115C
di
F
/dt = 550 A/s
V
RM
V
RRM
Fig. 5 Typical current and voltage waveforms at
turn-off in a circuit with voltage clamp.
Fig. 6 Max. repetitive diode forward current.
5SDF 10H4502
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1115-03 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 7 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated
otherwise.
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