ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
2500 V
I
FAVM
=
950 A
I
FSM
=
21 kA
V
F0
=
1.2 V
r
F
=
0.38 m
V
DClink
=
1500 V
Doc. No. 5SYA1113-04 Sep. 01
Patented free-floating silicon technology
Low on-state and switching losses
Optimized for use as freewheeling diode in GTO converters
Standard press-pack housing, hermetically cold-welded
Cosmic radiation withstand rating
Blocking
V
RRM
Repetitive peak reverse voltage
2500 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
50 mA
V
R
= V
RRM,
T
j
= 125C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
1500 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
(see Fig. 12)
min.
20 kN
F
m
Mounting force
max.
24 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.46 kg
D
S
Surface creepage distance
30 mm
D
a
Air strike distance
20 mm
Fast Recovery Diode
5SDF 11F2501
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 2 of 6
On-state
(see Fig. 2, 3)
I
FAVM
Max. average on-state current
950 A
I
FRMS
Max. RMS on-state current
1500 A
Half sine wave, T
c
= 85C
I
FSM
Max. peak non-repetitive
21 kA
tp
=
10 ms
Before surge:
surge current
65 kA
tp =
1 ms
T
c
= T
j
= 125C
2.2
10
6
A
2
s
tp =
10 ms
After surge:
I
2
dt
Max. surge current integral
2.1
10
6
A
2
s
tp =
1 ms
V
R
0 V
V
F
Forward voltage drop
1.6 V
I
F
=
1000 A
V
F0
Threshold voltage
1.2 V
Approximation for
r
F
Slope resistance
0.38 m
I
F
= 400...4000
A
T
j
= 125C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
16 V
di/dt = 500 A/s, T
j
= 125C
Turn-off
(see Fig. 6 to 11)
I
rr
Reverse recovery current
550 A
Q
rr
Reverse recovery charge
1200 C
E
rr
Turn-off energy
0.45 J
di/dt = 300 A/s,
I
F
= 700 A,
T
j
= 125C,
V
RM
= 2600 V,
C
S
= 2F (GTO snubber circuit)
Thermal
(see Fig. 1)
T
j
Operating junction temperature range
-40...125C
T
stg
Storage temperature range
-40...125C
R
thJC
Thermal resistance junction to case
40 K/kW
Anode side cooled
40 K/kW
Cathode side cooled
20 K/kW
Double side cooled
R
thCH
Thermal resistance case to heatsink
10 K/kW
Single side cooled
F
m
=
20... 24 kN
5 K/kW
Double side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
11.83
4.26
1.63
2.28
i
(s)
0.432
0.071
0.01
0.0054
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
m
= 20... 24 kN Double side cooled
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 3 of 6
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125C.
Fig. 3
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 4 of 6
Fig. 4
Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6
Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as
often used in GTO circuits.
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01
page 5 of 6
Fig. 7
Reverse recovery current vs. turn off di/dt
(max. values).
Fig. 8
Reverse recovery charge vs. turn off di/dt
(max. values).
Fig. 9
Turn-off energy vs. turn-off di/dt for I
F
= 300
A (max. values).
Fig. 10 Turn-off energy vs. turn-off di/dt for I
F
= 700
A (max. values).
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