ABB Semiconductors AG reserves the right to change specifications without notice.
V
CE
=
1200 V
I
C
=
150 A
Doc. No. 5SYA1524-00 Sep. 01
Low-loss, rugged IGBT SPT
chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact baseless
package
Snap-on PCB assembly
Integrated PTC substrate
temperature sensor
Maximum Rated Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Collector-Emitter Voltage
V
CES
V
GE
shorted
1200
V
DC Collector Current
I
C
T
hs
= 55C
150
A
Peak Collector Current
I
CM
Pulse: tp=1ms, T
hs
= 55C
300
A
Gate Emitter Voltage
V
GES
20
V
Total Power Dissipation
Ptot
T
hs
= 25C per switch
465
W
IGBT Switching SOA
SwSOA
I
C
= 300 A, V
CEM
= 1200 V, V
CC
1000 V,
V
GE
=
15 V, T
vj
=125C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA
SCSOA
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 s,
V
GE
=
15 V, T
vj
=125 C
DC Forward Current
I
F
150
A
Peak Forward Current
I
FM
Pulse: tp = 1ms, T
hs
= 55C
300
A
IGBT Module LoPak4 SPT
5SNS 0150V120100
PRELIMINARY
5SNS 0150V120100
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1524-00 Sep. 01
2 of 8
Maximum Rated Values
(cont.)
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Junction Temperature
T
vj
- 40 ~ 150
C
Storage Temperature
T
tstg
/T
cop
- 40 ~ 125
C
Isolation Voltage
V
iso
1 min, f = 50Hz
2500
V
Base to Heatsink
(M6) Hole 6.5mm diameter
2 ~ 3
Nm
Main Terminals
M6 screws, max. insertion
depth :10mm
3 ~ 5
Nm
PCB mounting
Self tapping screw, Hole
2.5mm diameter, 6.0mm deep
Mounting
Gate, Emitter Aux.
Spring pins, pitch of pins =
4mm, pcb thickness = 1.6mm
IGBT Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min. typ.
max. Unit
T
vj
= 25 C
1.90
2.30
V
Collector-Emitter
Saturation Voltage
V
CE(sat)
* I
C
= 150 A, V
GE
= 15 V
T
vj
= 125 C
2.10
V
Collector Cut-off Current
I
CES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 C
12
mA
Gate-Emitter leakage
Current
I
GES
V
CE
= 0 V, V
GE
=
20 V, T
vj
= 125 C
500
nA
Gate-Emitter Threshold
Voltage
V
GE(TO)
I
C
= 6 mA, V
CE
= V
GE
4.5
6.5
V
Total Gate Charge
Q
ge
I
C
= 150 A, V
CE
= 600 V, V
GE
= -15 to 15 V
1850
nC
Input Capacitance
C
ies
13.5
nF
Output Capacitance
C
oes
3.2
nF
Reverse Transfer
Capacitance
C
res
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
2.7
nF
Turn-On Delay Time
t
d(on)
0.20
s
Rise Time
t
r
I
C
= 150 A, V
CC
= 600 V,R
gon
= 6.8
,
T
vj
= 125 C, V
GE
=
15 V
0.06
s
Turn-Off Delay Time
t
d(off)
0.70
s
Fall Time
t
f
I
C
= 150 A, V
CC
= 600 V, R
goff
= 6.8
,
T
vj
= 125 C,V
GE
=
15 V
0.07
s
Turn-on Switching Energy
E
on
R
gon
= 6.8
15.5
mJ
Turn-off Switching Energy
E
off
R
goff
= 6.8
I
C
= 150 A, T
vj
= 125 C,
V
CC
= 600 V, V
GE
=
15 V,
inductive load, integrated up
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
15.0
mJ
Module stray Inductance
Plus to Minus
L
s DC
20
nH
T
hs
= 25 C
1.4
Resistance terminal-chip
R
CC'+EE'
T
hs
= 125 C
1.9
m
* Note 1: Collector emitter saturation voltage is given at die level.
5SNS 0150V120100
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1524-00 Sep. 01
3 of 8
Diode Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ.
max. Unit
T
vj
= 25 C
2.00
2.40
Forward Voltage
V
F
*
I
F
= 150 A
T
vj
= 125 C
2.00
V
Reverse Recovery Current
I
rrm
175
A
Reverse Recovery Charge
Q
rr
29
C
Reverse Recovery Time
t
rr
I
F
= 150 A, R
gon
= 6.8
,
V
CC
= 600 V,
V
GE
=
15 V, T
vj
= 125 C
0.15
s
Reverse Recovery Energy
E
rec
I
F
= 150 A, T
vj
= 125 C, V
CC
= 600 V,
R
gon
= 6.8
, V
GE
=
15 V,
inductive load, fully integrated
11.0
mJ
T
hs
= 25 C
1.4
Resistance terminal-chip
R
CC'+EE'
T
hs
= 125 C
1.9
m
* Note 2: Forward voltage is given at die level
Thermal Characteristics
(T
j
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ.
max. Unit
IGBT Thermal Resistance
Junction to Heatsink
R
th
j-h
Igbt
0.270 C/W
Diode Thermal Resistance
Junction to Heatsink
R
th
j-h
Diode
0.380 C/W
Equivalent IGBT Thermal
Resistance Junct. to Case
R
th
j-c
Igbt
0.120 C/W
Equivalent Diode Thermal
Resistance Junct. to Case
R
th
j-c
Diode
Heatsink:
flatness < +/- 50 m,
roughness < 6 m without ridge
Thermal grease:
thickness: 30 m < t < 50 m
0.240 C/W
Temperature sensor
PTC
Thermistor : R=1k 3%@25C,B-value (25C/100C): -760K 2%
Mechanical Properties
Parameter
Symbol
Conditions
min.
typ. max.
Unit
Dimensions
L* W* H Typical , see outline drawing
123 * 106.5 * 34.5
mm
Term. to base:
13.5
mm
Clearance Distance
D
C
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
11
mm
Term. to base:
14
mm
Surface Creepage
Distance
D
SC
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
11.5
mm
Weight
330
gr
5SNS 0150V120100
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1524-00 Sep. 01
4 of 8
Electrical configuration
Outline drawing
5SNS 0150V120100
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1524-00 Sep. 01
5 of 8
Fig. 1
Typ. Output Characteristics
at Tvj=25C
Fig. 2
Typ. Output Characteristics
at Tvj=125C
Fig. 3
Typ. Transfer Characteristics
Fig. 4
Typ. Gate charge Characteristics
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