ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
SM
=
6500 V
I
TAVM
=
1580 A
I
TRMS
=
2480 A
I
TSM
=
29700 A
V
T0
=
1.2 V
r
T
=
0.458 m
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-02 Apr. 02
Two thyristors integrated into one wafer
Patented free-floating silicon technology
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values
Symbol
Conditions
5STB 18U6500 5STB 18U6200 5STB 18U5800
V
SM
f = 5 Hz, t
p
= 10ms
6500 V
6200 V
5800 V
V
RM
f = 50 Hz, t
p
= 10ms
5600 V
5300 V
4900 V
I
RM
V
RM
, T
j
= 110C
600 mA
dV/dt
crit
Exp. to 0.67 x V
DRM
, T
j
= 110C
2000 V/s
Mechanical data
Parameter
Symbol Conditions
min
typ.
max
Unit
Mounting force
F
M
120
135
160
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Weight
m
3.6
kg
Surface creepage distance D
S
53
mm
Air strike distance
D
a
22
mm
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 2 of 5
On-state
Parameter
Symbol Conditions
min
typ.
max
Unit
Max. average on-state
current
I
TAVM
Half sine wave, T
c
= 70C
1580
A
Max. RMS on-state current I
TRMS
2480
A
Max. peak non-repetitive
surge current
I
TSM
29700
A
Limiting load integral
I
2
t
tp = 10 ms, Tj = 110C,
V = V
R
=0 V
4400
kA
2
s
Max. peak non-repetitive
surge current
I
TSM
31800
A
Limiting load integral
I
2
t
tp = 8.3 ms, Tj = 110C,
V = V
R
=0 V
4190
kA
2
s
On-state voltage
V
T
I
T
= 1600 A, T
j
= 110C
1.93
V
Threshold voltage
V
T0
I
T
= 1000 A - 3000 A, T
j
= 110C
1.2
V
Slope resistance
r
T
Tj = 110C
0.458
m
Holding current
I
H
T
j
= 25C
125
mA
T
j
= 110C
75
mA
Switching
Parameter
Symbol Conditions
min
typ.
max
Unit
Critical rate of rise of on-
state current
di/dt
crit
Cont.
f = 50 Hz
250
A/s
Critical rate of rise of on-
state current
di/dt
crit
T
j
= 110C, I
TRM
= 2000 A,
V
D
0.67V
RM
,
I
FG
= 2 A, t
r
= 0.5 s
Cont.
f = 1Hz
1000
A/s
Delay time
t
d
V
D
= 0.4
V
RM
, I
FG
= 2 A, t
r
= 0.5 s
3
s
Turn-off time
t
q
T
j
= 110C, I
TRM
= 2000 A,
V
R
= 200 V, di
T
/dt = -1.5 A/s,
V
D
0.67V
RM
, dv
D
/dt = 20V/s,
800
s
Recovery charge
Q
rr
T
j
= 110C, I
TRM
= 2000 A,
V
R
= 200 V,
di
T
/dt = -1.5 A/s
2100
3200
As
Triggering
Parameter
Symbol Conditions
min
typ.
max
Unit
Gate trigger voltage
V
GT
T
j
= 25C
2.6
V
Gate trigger current
I
GT
T
j
= 25C
400
mA
Gate non-trigger voltage
V
GD
V
D
= 0.4 x V
RM
, T
vjmax
= 110C
0.3
V
Gate non-trigger current
I
GD
V
D
= 0.4 x V
RM
10
mA
Peak forward gate voltage
V
FGM
12
V
Max. rated peak forward
gate current
I
FGM
10
A
Peak reverse gate voltage
V
RGM
10
V
Max. rated gate power loss P
G
For DC gate current
3
W
Max. rated peak forward
gate power
P
GM
see Fig. 9
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 3 of 5
Thermal
Parameter
Symbol Conditions
min
typ.
max
Unit
Operating junction
temperature range
T
j
110
C
Storage temperature range T
stg
-40
140
C
Thermal resistance junction
to case
R
thJC
Double side cooled
8
K/kW
Anode side cooled
16
K/kW
Cathode side cooled
16
K/kW
Thermal resistance case to
heatsink
R
thCH
Double side cooled
1.6
K/kW
Single side cooled
3.2
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
5.11
1.63
0.85
0.45
i
(s)
0.9531
0.1541
0.0211
0.0068
Fig. 1 Transient thermal impedance junction to case
Fig. 2 Isothermal on-state characteristics
Fig. 3 Isothermal on-state characteristics
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-02 Apr. 02
page 4 of 5
Fig. 4 On-state power dissipation vs. mean on-
state current. Switching losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
5STB 18U6500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Doc. No. 5SYA1037-02 Apr. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
I
GM
I
Gon
100 %
90 %
10 %
I
GM
2..5 A
I
Gon
1.5 IGT
di
G
/dt
2 A/s
t
r
1 s
t
p
(I
GM
)
5...20s
di
G
/dt
t
r
t
p
(I
GM
)
I
G
(t)
t
t
p
(I
Gon
)
Fig. 8 Recommendet gate current waveform.
Fig. 9 Max. rated peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
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