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Электронный компонент: AD811JR-REEL

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High Performance
Video Op Amp
AD811
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
Analog Devices, Inc., 1999
CONNECTION DIAGRAMS
FEATURES
High Speed
140 MHz Bandwidth (3 dB, G = +1)
120 MHz Bandwidth (3 dB, G = +2)
35 MHz Bandwidth (0.1 dB, G = +2)
2500 V/ s Slew Rate
25 ns Settling Time to 0.1% (For a 2 V Step)
65 ns Settling Time to 0.01% (For a 10 V Step)
Excellent Video Performance (R
L
=150 )
0.01% Differential Gain, 0.01 Differential Phase
Voltage Noise of 1.9 nV
Hz
Low Distortion: THD = 74 dB @ 10 MHz
Excellent DC Precision
3 mV max Input Offset Voltage
Flexible Operation
Specified for 5 V and 15 V Operation
2.3 V Output Swing into a 75 Load (V
S
= 5 V)
APPLICATIONS
Video Crosspoint Switchers, Multimedia Broadcast
Systems
HDTV Compatible Systems
Video Line Drivers, Distribution Amplifiers
ADC/DAC Buffers
DC Restoration Circuits
Medical--Ultrasound, PET, Gamma and Counter
Applications
The AD811 is also excellent for pulsed applications where tran-
sient response is critical. It can achieve a maximum slew rate of
greater than 2500 V/
s with a settling time of less than 25 ns to
0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.
The AD811 is ideal as an ADC or DAC buffer in data acquisi-
tion systems due to its low distortion up to 10 MHz and its wide
unity gain bandwidth. Because the AD811 is a current feedback
amplifier, this bandwidth can be maintained over a wide range
of gains. The AD811 also offers low voltage and current noise of
1.9 nV/
Hz and 20 pA/
Hz, respectively, and excellent dc accu-
racy for wide dynamic range applications.
12
6
3
3
0
1M
9
6
10 M
100 M
FREQUENCY Hz
GAIN dB
G = +2
R
L
= 150
R
G
= R
FB
V
S
=
5V
V
S
= 15V
PRODUCT DESCRIPTION
The AD811 is a wideband current-feedback operational ampli-
fier, optimized for broadcast quality video systems. The 3 dB
bandwidth of 120 MHz at a gain of +2 and differential gain and
phase of 0.01% and 0.01
(R
L
= 150
) make the AD811 an
excellent choice for all video systems. The AD811 is designed to
meet a stringent 0.1 dB gain flatness specification to a band-
width of 35 MHz (G = +2) in addition to the low differential
gain and phase errors. This performance is achieved whether
driving one or two back terminated 75
cables, with a low
power supply current of 16.5 mA. Furthermore, the AD811 is
specified over a power supply range of
4.5 V to
18 V.
0.10
15
0.03
0.01
6
0.02
5
0.06
0.04
0.05
0.07
0.08
0.09
14
13
12
11
10
9
8
7
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
SUPPLY VOLTAGE
Volts
DIFFERENTIAL GAIN
%
DIFFERENTIAL PHASE Degrees
R
F
= 649
F
C
= 3.58MHz
100 IRE
MODULATED RAMP
R
L
= 150
GAIN
PHASE
16-Lead SOIC (R-16) Package
20-Lead SOIC (R-20) Package
+IN
NC
+V
S
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
AD811
NC
IN
NC
+IN
V
S
NC
NC
NC
NC
OUTPUT
NC
NC
NC = NO CONNECT
3
4
5
6
7
8
9
10
18
17
16
15
14
13
12
11
AD811
NC
IN
NC
NC
V
S
NC
NC
NC
+V
S
NC
OUTPUT
NC
NC
NC = NO CONNECT
NC
NC
1
2
20
19
NC
NC
NC
NC
NC
NC
20-Lead LCC (E-20A) Package
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
1
2
3
4
8
7
6
5
AD811
3 2
1 20 19
18
17
16
15
14
9 10 11 12 13
4
5
6
7
8
AD811
NC
NC
+V
S
NC
OUTPUT
V
S
NC
NC
NC
NC
IN
+IN
NC
NC
NC
NC
NC
NC
IN
+IN
V
S
NC
OUTPUT
NC
+V
S
NC = NO CONNECT
NC = NO CONNECT
NC
NC
NC
8-Lead Plastic (N-8)
Cerdip (Q-8)
SOIC (SO-8) Packages
AD811J/A
1
AD811S
2
Model
Conditions
V
S
Min
Typ
Max
Min
Typ
Max
Units
DYNAMIC PERFORMANCE
Small Signal Bandwidth (No Peaking)
3 dB
G = +1
R
FB
= 562
15 V
140
140
MHz
G = +2
R
FB
= 649
15 V
120
120
MHz
G = +2
R
FB
= 562
5 V
80
80
MHz
G = +10
R
FB
= 511
15 V
100
100
MHz
0.1 dB Flat
G = +2
R
FB
= 562
5 V
25
25
MHz
R
FB
= 649
15 V
35
35
MHz
Full Power Bandwidth
3
V
OUT
= 20 V p-p
15 V
40
40
MHz
Slew Rate
V
OUT
= 4 V p-p
5 V
400
400
V/
s
V
OUT
= 20 V p-p
15 V
2500
2500
V/
s
Settling Time to 0.1%
10 V Step, A
V
= 1
15 V
50
50
ns
Settling Time to 0.01%
65
65
ns
Settling Time to 0.1%
2 V Step, A
V
= 1
5 V
25
25
ns
Rise Time, Fall Time
R
FB
= 649, A
V
= +2
15 V
3.5
3.5
ns
Differential Gain
f = 3.58 MHz
15 V
0.01
0.01
%
Differential Phase
f = 3.58 MHz
15 V
0.01
0.01
Degree
THD @ f
C
= 10 MHz
V
OUT
= 2 V p-p, A
V
= +2
15 V
74
74
dBc
Third Order Intercept
4
@ f
C
= 10 MHz
5 V
36
36
dBm
15 V
43
43
dBm
INPUT OFFSET VOLTAGE
5 V,
15 V
0.5
3
0.5
3
mV
T
MIN
to T
MAX
5
5
mV
Offset Voltage Drift
5
5
V/
C
INPUT BIAS CURRENT
Input
5 V,
15 V
2
5
2
5
A
T
MIN
to T
MAX
15
30
A
+Input
5 V,
15 V
2
10
2
10
A
T
MIN
to T
MAX
20
25
A
TRANSRESISTANCE
T
MIN
to T
MAX
V
OUT
=
10 V
R
L
=
15 V
0.75
1.5
0.75
1.5
M
R
L
= 200
15 V
0.5
0.75
0.5
0.75
M
V
OUT
=
2.5 V
R
L
= 150
5 V
0.25
0.4
0.125
0.4
M
COMMON-MODE REJECTION
V
OS
(vs. Common Mode)
T
MIN
to T
MAX
V
CM
=
2.5
5 V
56
60
50
60
dB
T
MIN
to T
MAX
V
CM
=
10 V
15 V
60
66
56
66
dB
Input Current (vs. Common Mode)
T
MIN
to T
MAX
1
3
1
3
A/V
POWER SUPPLY REJECTION
V
S
=
4.5 V to
18 V
V
OS
T
MIN
to T
MAX
60
70
60
70
dB
+Input Current
T
MIN
to T
MAX
0.3
2
0.3
2
A/V
Input Current
T
MIN
to T
MAX
0.4
2
0.4
2
A/V
INPUT VOLTAGE NOISE
f = 1 kHz
1.9
1.9
nV/
Hz
INPUT CURRENT NOISE
f = 1 kHz
20
20
pA/
Hz
OUTPUT CHARACTERISTICS
Voltage Swing, Useful Operating Range
5
5 V
2.9
2.9
V
15 V
12
12
V
Output Current
T
J
= +25
C
100
100
mA
Short-Circuit Current
150
150
mA
Output Resistance
(Open Loop @ 5 MHz)
9
9
INPUT CHARACTERISTICS
+Input Resistance
1.5
1.5
M
Input Resistance
14
14
Input Capacitance
+Input
7.5
7.5
pF
Common-Mode Voltage Range
5 V
3
3
V
15 V
13
13
V
POWER SUPPLY
Operating Range
4.5
18
4.5
18
V
Quiescent Current
5 V
14.5
16.0
14.5
16.0
mA
15 V
16.5
18.0
16.5
18.0
mA
TRANSISTOR COUNT
# of Transistors
40
40
NOTES
1
The AD811JR is specified with
5 V power supplies only, with operation up to
12 volts.
2
See Analog Devices' military data sheet for 883B tested specifications.
3
FPBW = slew rate/(2
V
PEAK
).
4
Output power level, tested at a closed loop gain of two.
5
Useful operating range is defined as the output voltage at which linearity begins to degrade.
Specifications subject to change without notice.
AD811SPECIFICATIONS
(@ T
A
= +25 C and V
S
= 15 V dc, R
LOAD
= 150
unless otherwise noted)
2
REV. D
AD811
REV. D
3
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18 V
AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . . .
12 V
Internal Power Dissipation
2
. . . . . . . . Observe Derating Curves
Output Short Circuit Duration . . . . . Observe Derating Curves
Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . .
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . .
6 V
Storage Temperature Range (Q, E) . . . . . . . . 65
C to +150
C
Storage Temperature Range (N, R) . . . . . . . . 65
C to +125
C
Operating Temperature Range
AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
C to +70
C
AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
C to +85
C
AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
C to +125
C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
8-Lead Plastic Package:
JA
= 90
C/W
8-Lead Cerdip Package:
JA
= 110
C/W
8-Lead SOIC Package:
JA
= 155
C/W
16-Lead SOIC Package:
JA
= 85
C/W
20-Lead SOIC Package:
JA
= 80
C/W
20-Lead LCC Package:
JA
= 70
C/W
ORDERING GUIDE
Temperature
Package
Model
Range
Option*
AD811AN
40
C to +85
C
N-8
AD811AR-16
40
C to +85
C
R-16
AD811AR-20
40
C to +85
C
R-20
AD811JR
0
C to +70
C
SO-8
AD811SQ/883B
55
C to +125
C
Q-8
5962-9313101MPA
55
C to +125
C
Q-8
AD811SE/883B
55
C to +125
C
E-20A
5962-9313101M2A
55
C to +125
C
E-20A
AD811JR-REEL
0
C to +70
C
SO-8
AD811JR-REEL7
0
C to +70
C
SO-8
AD811AR-16-REEL
40
C to +85
C
R-16
AD811AR-16-REEL7
40
C to +85
C
R-16
AD811AR-20-REEL
40
C to +85
C
R-20
AD811ACHIPS
40
C to +85
C
Die
AD811SCHIPS
55
C to +125
C
Die
*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) =
Small Outline IC (SOIC).
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD811 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction tempera-
ture is +145
C. For the cerdip and LCC packages, the maxi-
mum junction temperature is +175
C. If these maximums are
exceeded momentarily, proper circuit operation will be restored
as soon as the die temperature is reduced. Leaving the device in
the "overheated" condition for an extended period can result in
device burnout. To ensure proper operation, it is important to
observe the derating curves in Figures 17 and 18.
While the AD811 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. One important
example is when the amplifier is driving a reverse terminated
75
cable and the cable's far end is shorted to a power supply.
With power supplies of
12 volts (or less) at an ambient tem-
perature of +25
C or less, if the cable is shorted to a supply rail,
then the amplifier will not be destroyed, even if this condition
persists for an extended period.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the AD811 features proprietary ESD pro-
tection circuitry, permanent damage may still occur on these
devices if they are subjected to high energy electrostatic dis-
charges. Therefore, proper ESD precautions are recommended
to avoid any performance degradation or loss of functionality.
METALIZATION PHOTOGRAPH
Contact Factory for Latest Dimensions.
Dimensions Shown in Inches and (mm).
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD811 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
AD811Typical Performance Characteristics
REV. D
4
20
0
0
20
15
5
5
10
10
15
SUPPLY VOLTAGE Volts
COMMON-MODE VOLTAGE RANGE
Volts
T
A
= +25 C
Figure 1. Input Common-Mode Voltage Range vs. Supply
35
0
10k
15
5
100
10
10
30
20
25
1k
LOAD RESISTANCE
OUTPUT VOLTAGE Volts pp
V
S
= 5V
V
S
= 15V
Figure 2. Output Voltage Swing vs. Resistive Load
10
30
60
140
0
20
40
10
100
120
80
60
40
20
0
20
JUNCTION TEMPERATURE C
INPUT BIAS CURRENT
A
V
S
= 15V
V
S
= 5V
NONINVERTING INPUT
5 TO 15V
INVERTING
INPUT
Figure 3. Input Bias Current vs. Junction Temperature
20
0
0
20
15
5
5
10
10
15
SUPPLY VOLTAGE
Volts
MAGNITUDE OF THE OUTPUT VOLTAGE
Volts
T
A
= +25 C
NO LOAD
R
L
= 150
Figure 4. Output Voltage Swing vs. Supply
21
3
140
12
6
40
9
60
18
15
120
80
60
40
100
20
0
20
JUNCTION TEMPERATURE C
QUIESCENT SUPPLY CURRENT mA
V
S
= 15V
V
S
= 5V
Figure 5. Quiescent Supply Current vs. Junction
Temperature
10
10
140
4
8
40
6
60
2
2
0
4
6
8
120
100
80
60
40
20
0
20
JUNCTION TEMPERATURE C
INPUT OFFSET VOLTAGE mV
V
S
= 5V
V
S
= 15V
Figure 6. Input Offset Voltage vs. Junction Temperature
AD811
REV. D
5
250
50
60
140
200
100
40
150
100
120
80
60
40
20
0
20
JUNCTION TEMPERATURE C
SHORT CIRCUIT CURRENT mA
V
S
= 5V
V
S
= 15V
Figure 7. Short Circuit Current vs. Junction Temperature
10
0.01
10k
100M
1
0.1
100k
10M
1M
FREQUENCY Hz
CLOSED-LOOP OUTPUT RESISTANCE
GAIN = +2
R
FB
= 649
V
S
= 5V
V
S
= 15V
Figure 8. Closed-Loop Output Resistance vs. Frequency
10
0
1.6k
6
2
600
4
400
8
1.4k
1.2k
1.0k
800
VALUE OF FEEDBACK RESISTOR (R
FB
)
RISETIME ns
OVERSHOOT %
60
40
20
0
RISE TIME
OVERSHOOT
V
S
= 15V
V
O
= 1V pp
R
L
= 150
GAIN = +2
Figure 9. Rise Time and Overshoot vs. Value of
Feedback Resistor, R
FB
2.0
0
60
140
1.5
0.5
40
1.0
100
120
80
60
40
20
0
20
JUNCTION TEMPERATURE C
TRANSRESISTANCE M
V
S
= 5V
R
L
= 150
V
OUT
= 2.5V
V
S
= 15V
R
L
= 200
V
OUT
= 10V
Figure 10. Transresistance vs. Junction Temperature
100
10
1
10
100
FREQUENCY Hz
NOISE VOLTAGE nV/ Hz
NOISE CURRENT pA/ Hz
100
100k
10k
1k
10
1
NONINVERTING CURRENT V
S
= 5 TO 15V
INVERTING CURRENT V
S
= 5 TO 15V
VOLTAGE NOISE V
S
= 15V
VOLTAGE NOISE V
S
= 5V
Figure 11. Input Noise vs. Frequency
200
0
1.6k
120
40
600
80
400
160
1.4k
1.2k
1.0k
800
VALUE OF FEEDBACK RESISTOR (R
FB
)
3dB BANDWIDTH MHz
PEAKING dB
8
6
4
2
BANDWIDTH
PEAKING
V
O
= 1V pp
V
S
= 15V
R
L
= 150
GAIN = +2
10
0
Figure 12. 3 dB Bandwidth and Peaking vs. Value of R
FB