1011LD110
110 Watts, 32 Volts
Pulsed Avionics 1030 to 1090 MHz
LDMOS FET
GENERAL DESCRIPTION
The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode
lateral MOSFET capable of providing 110 W
pk
of RF power from 1030 to 1090
MHz. The device is nitride passivated and utilizes gold metallization to ensure
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55QZ-1
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25
C (P
d
)
300
W
Voltage and Current
Drain-Source (V
DSS
)
7
5V
Gate-Source (V
GS
)
20V
Temperatures
Storage Temperature
-65 to +150
C
Operating Junction Temperature
+200
C
ELECTRICAL CHARACTERISTICS @ 25
C
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP MAX UNITS
BV
dss
Drain-Source Breakdown
V
gs
= 0V, I
d
= 10mA
75
V
I
dss
Drain-Source
Leakage
Current
V
ds
= 32V, V
gs
= 0V
5 A
I
gss
Gate-Source
Leakage
Current
V
gs
= 10V, V
ds
= 0V
1
A
V
gs(th)
Gate
Threshold
Voltage V
ds
= 10V, I
d
= 20 mA
3
6
V
V
ds(on)
Drain-Source
On
Voltage V
gs
= 10V, I
d
= 1A
0.3
V
g
FS
Forward
Transconductance
V
ds
= 10V, I
d
= 1A
1
S
JC
1
Thermal Resistance
0.6
C/W
FUNCTIONAL CHARACTERISTICS @ 25
C, Vds = 32V, I
dq
= 250mA
G
PS
Common Source Power Gain
Pulse width = 32 s, LTDC=2%
13
15
dB
Pd
Pulse Droop
F=1030/1090 MHz, P
out
= 110W
0.5
dB
d
Drain Efficiency
F = 1030 MHz, P
out
= 110W
45
50
%
Load Mismatch
F = 1090 MHz, P
out
= 110W
3:1
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format 1: 32s, 2% Long Term Duty Factor
Rev. B - Apr 2004
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1011LD110
Load Power vs. Drive Power
1030 MHz (typical)
0.0
20.0
40.0
60.0
80.0
100.0
120.0
0.00
1.00
2.00
3.00
P
D
(W)
P
L
(W)
Load Power vs. Drive Power
1090 MHz (typical)
0.0
20.0
40.0
60.0
80.0
100.0
120.0
0.00
1.00
2.00
3.00
PD (W)
PL
(
W
)
Drain Efficiency vs. Load Power
1090 MHz (typical)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
0.0
20.0
40.0
60.0
80.0 100.0 120.0
P
L
(W)
n (%)
Return Loss vs. Load Power
1090 MHz (typical)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
0.0
20.0
40.0
60.0
80.0 100.0 120.0
P
L
(W)
RL (dB)
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1011LD110
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
1011LD110
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