A
valanche Rated
Avalanche Rate
d
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
POWER MOS IV
TM
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
Symbol
V
DSS
V
GS
I
D
I
DM
I
AR
P
D
E
AS
E
AR
T
J
,T
STG
T
L
UNIT
Volts
Amps
Watts
W/K
mJ
C
UNIT
Volts
A
nA
Amps
Ohms
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 250
A)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
20V, V
DS
= 0V)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 9.0A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 9.0A, T
C
= 125
C)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 14.0A)
STATIC ELECTRICAL CHARACTERISTICS
2N7227
400
20
14
9
56
14
150
60
1.2
700
15
-55 to 150
300
Symbol
BV
DSS
V
GS
(TH)
I
DSS
I
GSS
I
D
(ON)
R
DS
(ON)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Continuous Drain Current @ T
C
= 100
C
Pulsed Drain Current
1
Avalanche Current
1
Total Power Dissipation @ T
C
= 25
C
Total Power Dissipation @ T
C
= 100
C
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
2N7227
400 Volt
0.315
JX2N7227*
JV2N7227*
*QUALIFIED TO MIL-S-19500/592 31/7/92
MIN
TYP
MAX
400
2
4
25
250
100
14
0.315
0.680
0.415
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
051-4015 Rev D
G
D
S
TO-254
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 2.35
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
2N7227
MIN
TYP
MAX
12
24
2400
2800
385
540
160
240
100
150
12
24
41
65
12
35
18
190
40
170
13
130
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
JC
R
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
14
56
1.7
279
1200
3.6
9.0
UNIT
K/W
3
MIN
TYP
MAX
0.83
31
THERMAL CHARACTERISTICS
051-4015 Rev D
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
I , DRAIN CURRENT (AMPERES) D
I , DRAIN CURRENT (AMPERES) D
I , DRAIN CURRENT (AMPERES) D
V (TH), THRESHOLD VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPERES) D
R (ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
(NORMALIZED)
R (ON), DRAIN-TO-SOURCE ON RESISTANCE
DS
(NORMALIZED)
BV , DRAIN-TO-SOURCE BREAKDOWN
DSS
VOLTAGE (NORMALIZED)
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
0
40
80
120
160
200
16
12
8
4
0
-50 -25 0 25 50 75 100 125 150
-50
-25
0
25
50
75
100
125 150
-50 -25 0 25 50 75 100 125 150
0
2
4
6
8
0
2
4
6
8
10
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
2N7227
25 50
75
100 125 150
20
16
12
8
4
0
20
16
12
8
4
0
20
16
12
8
4
0
1.75
1.50
1.25
1.00
0.75
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
051-4015 Rev D
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
TJ = +125
C
TJ = +25
C
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
4.5V
5V
5.5V
4V
TJ = +125
C
TJ = -55
C
TJ = -55
C
VGS=6V, 6.5V & 10V
VGS=10V
4.5V
5V
5.5V
VGS=6.5V
4V
VGS=6V
C, CAPACITANCE (pF)
I , REVERSE DRAIN CURRENT (AMPERES) DR
I , DRAIN CURRENT (AMPERES) D
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
g
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
0
.5 1.0 1.5
2.0
0.1
0.5
1
5
10
50
TO-254AA Package Outline
1
5
10
50 100
400
2N7227
0
40
80
120
160
200
60
10
5
1
0.5
.1
7,000
5,000
1,000
500
100
70
100
50
20
10
5
2
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
051-4015 Rev D
TC =+25
C
TJ =+150
C
SINGLE PULSE
TJ =+150
C
TJ =+25
C
Crss
Coss
Ciss
VDS=80V
VDS=320V
I
D
= I
D
[Cont.]
1mS
10mS
100mS
DC
100
S
VDS=200V
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