POWER MOS IV
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APL1001P
1000V
18.0A 0.60
W
HERMETIC PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
050-5899 Rev - 8-2001
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL1001P
1000
18
72
30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
1000
18
0.60
25
250
100
2
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
R
Q
JC
R
Q
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
C/W
P-Pack
DYNAMIC CHARACTERISTICS
APL1001P
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60C
Watts
050-5899 Rev - 8-2001
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6000
7200
775
1080
285
430
14
28
14
28
60
92
14
20
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
40
30
20
10
0
40
30
20
10
0
0
20
40
60
80
100
0
4
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
6.0 V
5.0 V
5.5 V
4.5 V
VGS= 15V, 10V, 8V, 7V & 6.5V
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
q
JC
, THERMAL IMPEDANCE (C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
6.0 V
5.0 V
5.5 V
4.5 V
VGS=6.5V, 7.0V, 8.0V,
10V & 15V
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
C, CAPACITANCE (pF)
V
GS
(TH), THRESHOLD VOLTAGE
B
V
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VOLTAGE (NORMALIZED)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = +125C
TJ = +25C
TJ = -55C
VGS=10V
VGS=20V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
Crss
Coss
Ciss
050-5899 Rev - 8-2001
20
15
10
5
0
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
.1
100S
1mS
10mS
100mS
D C
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25C
TJ =+150C
SINGLE PULSE
0
2
4
6
8
0
10
20
30
40
25
50
75
100
125 150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
1
10
100
1000
.01
.1
1
10
50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20,000
10,000
5,000
1,000
500
100
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
APL1001P
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
050-5899 Rev - 8-2001
P-Pack Package Outline
29.34 (1.155)
29.08 (1.145)
35.81 (1.41)
35.31 (1.39)
51.05 (2.01)
50.55 (1.99)
3.43 (.135)
2.92 (.115)
(4-Places)
11.63 (.458)
11.13 (.438)
12.45 (.490)
11.94 (.470)
35.18 (1.385)
34.67 (1.365)
41.53 (1.635)
41.02 (1.615)
3.43 (.135)
2.92 (.115)
(4-Places)
5.33 (.210)
4.83 (.190)
1.40 (.055)
1.02 (.040)
9.27 (.365)
8.64 (.340)
.635 (.025)
.381 (.015)
4.39 (.173)
4.14 (.163)
(4 Places)
Dimensions in Millimeters and (Inches)
28.70 (1.130)
28.45 (1.120)
4.06 (.160)
3.81 (.150)
(5 Places)
10.92 (.430)
10.67 (.420)
Drain
Gate
Source
Source Sense
APL1001P
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