MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
APT1004RCN 1000V 3.6A 4.00
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-0017 Rev C
POWER MOS IV
TM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
TO-254
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RCN
1000
3.6
14.4
30
125
1.0
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/
C
C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
3.6
4.00
250
1000
100
2
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec
.
MIN
TYP
MAX
125
125
3.6
UNIT
Watts
Amps
DYNAMIC CHARACTERISTICS
APT1004RCN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 1.8
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
15
22
805
950
115
160
37
60
35
55
4.3
7
18
27
10
20
12
24
33
50
16
32
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
JC
R
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
3.6
14.4
1.3
290
580
1.65
3.3
UNIT
W/
C
MIN
TYP
MAX
1.00
50
THERMAL CHARACTERISTICS
050-0017 Rev C
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
100
200
300
400
500
0
4
8
12
16
20
0
2
4
6
8
0
2
4
6
8
10
12
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT1004RCN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
5
4
3
2
1
0
20
15
10
5
0
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
050-0017 Rev C
5V
4.5V
5.5V
4V
5V
4.5V
4V
VGS=10V
VGS=20V
VGS=10V
6V
VGS=5.5V,6V &10V
TJ = -55
C
TJ = +25
C
TJ = +125
C
VDS> ID (ON) x RDS (ON)MAX.
230
SEC. PULSE TEST
TJ = +125
C
TJ = +25
C
TJ = -55
C
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
TO-254AA Package Outline
APT1004RCN
10
S
100
S
1mS
10mS
100mS
DC
10,000
1,000
100
10
100
50
20
10
5
2
1
1
5
10
50 100
500 1000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
050-0017 Rev C
20
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
TJ =+150
C
TJ =+25
C
VDS=500V
VDS=200V
VDS=100V
Crss
Ciss
Coss
TC =+25
C
TJ =+150
C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
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