Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
050-5599 Rev B
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/
C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
19
0.500
250
1000
100
2
4
APT10050JVFR
1000
19
76
30
40
450
3.6
-55 to 150
300
19
50
2500
APT10050JVFR
1000V
19A
0.500
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
FREDFET
G
D
S
FREDFET
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode
100% Avalanche Tested
Lower Leakage
Popular SOT-227 Package
Faster Switching
POWER MOS V
APT10050JVFR
050-5599 Rev B
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 0.6
MIN
TYP
MAX
6600
7900
595
830
290
430
335
500
29
45
165
250
16
32
13
26
59
90
8
16
UNIT
pF
nC
ns
MIN
TYP
MAX
19
76
1.3
5
T
j
= 25
C
300
T
j
= 125
C
600
T
j
= 25
C
1.7
T
j
= 125
C
4.8
T
j
= 25
C
12
T
j
= 125
C
19
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25
C, L = 13.85mH, R
G
=
25
, Peak I
L
= 19A
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
5
I
S
-I
D
[Cont.],
di
/
dt
= 100A/
s, V
DD
V
DSS
,
T
j
150
C, R
G
= 2.0
,
V
R
= 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
R
JC
R
JA
V
Isolation
Torque
MIN
TYP
MAX
0.28
40
2500
13
UNIT
C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
APT10050JVFR
050-5599 Rev B
0
100
200
300
400
500
0
4
8
12
16
20
0
2
4
6
8
0
10
20
30
40
50
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
50
40
30
20
10
0
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
50
40
30
20
10
0
20
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
TJ = +125
C
TJ = +25
C
TJ = -55
C
5V
4.5V
4V
5V
4.5V
4V
VGS=5.5V, 10V & 15V
VGS=5.5V, 10V & 15V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
APT10050JVFR
050-5599 Rev B
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
1
5
10
50 100
500 1000
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
TC =+25
C
TJ =+150
C
SINGLE PULSE
100
50
10
5
1
.5
.1
20
16
12
8
4
0
30,000
10,000
5,000
1,000
500
100
100
50
10
5
1
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150
C
TJ =+25
C
VDS=500V
VDS=200V
VDS=100V
Crss
Coss
Ciss
I
D
= I
D
[Cont.]
10
S
1mS
10mS
100mS
DC
100
S
"UL Recognized" File No. E145592
PDF 
ZIP