050-7621 Rev A 10-2005
APT100GN60B2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT100GN60B2(G)
600
30
229
135
300
300A @ 600V
625
-55 to 175
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
8
@ T
C
= 25C
Continuous Collector Current
8
@ T
C
= 110C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 175C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
CE(ON)
temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
600V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
6s Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.05
1.45
1.85
1.87
25
TBD
600
2
600V
APT100GN60B2
APT100GN60B2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
T-Max
G
C
E
050-7621 Rev A 10-2005
APT100GN60B2(G)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
8 Continuous current limited by package pin temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.21
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
T
J
= 175C, R
G
= 4.3
7
, V
GE
=
15V, L = 100H,V
CE
= 600V
V
CC
= 600V, V
GE
= 15V,
T
J
= 125C, R
G
= 4.3
7
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0
7
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 100A
R
G
= 1.0
7
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
6000
560
200
9.5
600
45
340
300
6
31
65
310
55
4750
5095
2675
31
65
350
85
5000
6255
3300
UNIT
pF
V
nC
A
s
ns
J
ns
J
050-7621 Rev A 10-2005
APT100GN60B2(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
, THRESHOLD VOLTAGE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
(NORMALIZED
)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
300
250
200
150
100
50
0
300
250
200
150
100
50
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
8
10
12
14
16
0
25
50
75
100 125 150 175
-50 -25
0
25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 175
350
300
250
200
150
100
50
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
300
250
200
150
100
50
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
9V
8V
7V
10V
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 200A
I
C
= 100A
I
C
= 50A
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 200A
I
C
= 100A
I
C
= 50A
T
J
= 125C
T
J
= 25C
T
J
= -55C
T
J
= 125C
T
J
= 25C
T
J
= -55C
V
GE
= 15V
T
J
= 175C
11V
12V
T
J
= 175C
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 100A
T
J
= 25C
Lead Temperature
Limited
Lead Temperature
Limited
13V
050-7621 Rev A 10-2005
APT100GN60B2(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
400V
R
G
=
1.0
L = 100H
SWITCHING ENERGY LOSSES (mJ)
E
ON2
, TURN ON ENERGY LOSS (mJ)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (mJ)
E
OFF
, TURN OFF ENERGY LOSS (mJ)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
R
G
=
1.0, L
=
100
H, V
CE
=
400V
V
CE
= 400V
T
J
= 25C
,
or
125C
R
G
= 1.0
L = 100H
40
35
30
25
20
15
10
5
0
250
200
150
100
50
0
25
20
15
10
5
0
45
40
35
30
25
20
15
10
5
0
500
400
300
200
100
0
140
120
100
80
60
40
20
0
8
7
6
5
4
3
2
1
0
25
20
15
10
5
0
V
GE
= 15V
T
J
=
125C, V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25C, V
GE
=
15V
T
J
=
125C
T
J
=
25C
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
T
J
=
125C
T
J
=
25C
V
CE
= 400V
V
GE
= +15V
R
G
= 1.0
V
CE
= 400V
V
GE
= +15V
T
J
= 125C
0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225
0 25 50 75 100 125 150 175 200 225
0
5
10
15
20
0
25
50
75
100
125
R
G
=
1.0, L
=
100
H, V
CE
=
400V
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
050-7621 Rev A 10-2005
APT100GN60B2(G)
TYPICAL PERFORMANCE CURVES
10,000
5,000
1,000
500
100
350
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100 200 300 400 500 600 700
C
oes
C
res
C
ies
0.25
0.20
0.15
0.10
0.05
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
30
50
70
90
110 130 150
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= 400V
R
G
= 1.0
100
50
10
4
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
0.949
0.116
0.00708
0.244
Power
(watts)
RC MODEL
Junction
temp. (C)
Case temperature. (C)
050-7621 Rev A 10-2005
APT100GN60B2(G)
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT100DQ60
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
Emitter
Gate
Collector (Cathode)
e1 SAC: Tin, Silver, Copper
T-MAX
(B2) Package Outline
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
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