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Электронный компонент: APT10M09LVFR

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ADVANCED TECHNICAL
INFORMATION
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
100
100
0.009
100
500
100
2
4
APT10M09
100
100
400
30
40
625
5.0
-55 to 150
300
100
50
3000
APT10M09B2VFR
APT10M09LVFR
100V 100A 0.009
W
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current
2 5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1 5
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 5
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
POWER MOS V
FREDFET
T-MAXTM
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
TO-264
050-5905 rev- 11-99
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Identical Specifications:
T-MAXTM
or TO-264 Package
Lower Leakage
Faster Switching
Fast Recovery Body Diode
100% Avalanche Tested
B2VFR
LVFR
ADVANCED TECHNICAL
INFORMATION
DYNAMIC CHARACTERISTICS
APT10M09 B2VFR - LVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt
6
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
W
MIN
TYP
MAX
10030
3730
1370
340
109
131
18
36
51
9
UNIT
pF
nC
ns
MIN
TYP
MAX
100
400
1.3
5
T
j
= 25C
190
T
j
= 125C
370
T
j
= 25C
0.4
T
j
= 125C
1.7
T
j
= 25C
9
T
j
= 125C
15
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.20
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
Emitter
Gate
Collector
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
TO-264 (L) Package Outline
T-MAXTM (B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
1
Repetitive Rating: Pulse width limited by maximum T
j
4
Starting T
j
=
+25C, L = 600H, R
G
=
25
W
, Peak I
L
= 100A
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5
The maximum current is limited by lead temperature.
3
See MIL-STD-750 Method 3471
6
I
S
-I
D
[Cont.],
di
/
dt
= 100A/s, V
R
=
50V,
T
j
150C, R
G
= 2.0
W
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-5905 rev- 11-99