050-5605 Rev B
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/
C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
100
75
0.025
250
1000
100
2
4
APT10M25BVFR
100
75
300
30
40
300
2.4
-55 to 150
300
75
30
1500
TO-247
APT10M25BVFR
100V
75A
0.025
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode
100% Avalanche Tested
Lower Leakage
Popular TO-247 Package
Faster Switching
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2 5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1 5
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 5
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
FREDFET
G
D
S
FREDFET
POWER MOS V
DYNAMIC CHARACTERISTICS
APT10M25BVFR
050-5605 Rev B
1
Repetitive Rating: Pulse width limited by maximum T
j
4
Starting T
j
=
+25
C, L = 0.53mH, R
G
=
25
, Peak I
L
= 75A
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
5
The maximum current is limited by lead temperature.
3
See MIL-STD-750 Method 3471
6
I
S
-I
D
[Cont.],
di
/
dt
= 100A/
s, V
R
=
50V,
T
j
150
C, R
G
= 2.0
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
JC
, THERMAL IMPEDANCE (
C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1 5
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt
6
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 1.6
MIN
TYP
MAX
4300
5160
1600
2240
650
975
150
225
28
42
75
115
13
26
22
44
40
60
10
20
UNIT
pF
nC
ns
MIN
TYP
MAX
75
300
1.3
5
T
j
= 25
C
200
T
j
= 125
C
300
T
j
= 25
C
0.5
T
j
= 125
C
1.1
T
j
= 25
C
10
T
j
= 125
C
14
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.42
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
APT10M25BVFR
050-5605 Rev B
0
10
20
30
40
50
0
1
2
3
4
5
0
2
4
6
8
10
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
150
125
100
75
50
25
0
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
150
125
100
75
50
25
0
150
125
100
75
50
25
0
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V & 15V
6V
TJ = +25
C
TJ = -55
C
TJ = +125
C
TJ = +125
C
TJ = +25
C
TJ = -55
C
7V
5.5V
4.5V
5V
VGS=20V
VGS=10V
VGS=15V
10V
6.5V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
4V
6V
7V
5.5V
4.5V
5V
6.5V
4V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
1
5
10
50
100
.01
.1
1
10
50
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
APT10M25BVFR
050-5605 Rev B
TC =+25
C
TJ =+150
C
SINGLE PULSE
400
100
50
10
5
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
Ciss
100
S
10mS
100mS
DC
1mS
TJ =+150
C
TJ =+25
C
Coss
Ciss
VDS=50V
VDS=20V
VDS=80V
I
D
= I
D
[Cont.]
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
TO-247 Package Outline
15,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
PDF 
ZIP