050-7419 Rev B 6-2004
APT11GP60K_SA
TYPICAL PERFORMANCE CURVES
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
SSOA rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
250
2500
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 11A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 11A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT11GP60K_SA
600
20
30
41
20
45
45A @ 600V
187
-55 to 150
300
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 100C
Pulsed Collector Current
1
@ T
C
= 150C
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
G
C
E
POWER MOS 7
IGBT
APT11GP60K
APT11GP60SA
600V
TO-220
G C
E
D
2
PAK
G
C
E
(K)
(SA)
050-7419 Rev B 6-2004
APT11GP60K_SA
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 11A
T
J
= 150C, R
G
= 5
, V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 11A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 11A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
1210
110
6
7.5
40
8
13
45
7
9
29
50
46
85
90
7
9
65
85
46
185
215
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
0.67
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7419 Rev B 6-2004
APT11GP60K_SA
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
1
2
3
4
0
1
2
3
4
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=-55C
T
C
=125C
T
C
=25C
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 11A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=-55C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
=
5.5A
I
C
=
11A
I
C
=
22A
I
C
=
22A
I
C
=
11A
I
C
=
5.5A
40
35
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
050-7419 Rev B 6-2004
APT11GP60K_SA
V
CE
= 400V
R
G
= 5
L = 100 H
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
=
15V,T
J
=25C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
=
25 or 125C,V
GE
=
15V
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
T
J
=125C, V
GE
=15V
T
J
= 25C, V
GE
=15V
V
CE
= 400V
T
J
= 25C, T
J
=125C
R
G
= 5
L = 100 H
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
30
35
5
10
15
20
25
5
10
15
20
25
5
10
15
20
25
0
10
20
30
40
50
0
25
50
75
100
125
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
500
400
300
200
100
0
600
500
400
300
200
100
0
R
G
=
5
, L
=
100
H, V
CE
=
400V
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
L = 100 H
RG = 5
VCE = 400V
VGE = +15V
T
J
= 125C
E
on2
5.5A
E
off
11A
E
on2
11A
E
on2
22A
E
off
22A
E
off
5.5A
VCE = 400V
VGE = +15V
RG = 5
E
on2
5.5A
E
off
11A
E
on2
11A
E
on2
22A
E
off
22A
E
off
5.5A
R
G
=
5
, L
=
100
H, V
CE
=
400V
T
J
=
125C, V
GE
=
5V
T
J
=
25C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
T
J
=
125C, V
GE
=
15V
050-7419 Rev B 6-2004
APT11GP60K_SA
TYPICAL PERFORMANCE CURVES
0
5
10
15
20
25
1000
500
100
50
10
2,000
1,000
500
100
50
10
5
1
50
45
40
35
30
25
20
15
10
5
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 200V
RG = 5
Cies
Coes
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
0.376
0.295
0.00350F
0.0545F
RC MODEL
Case temperature(
C)
Junction
temp (
C)
Power
(watts)
050-7419 Rev B 6-2004
APT11GP60K_SA
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT15DS30
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220AC Package Outline (K)
TO-263 (D2) Surface mount Package Outline (SA)
10.06 (.396)
10.31 (.406)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.330 (.013)
0.432 (.017)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
Collector (Heat Sink)
Gate
Collector
Emitter
0.000 (.000)
0.254 (.010)
6.02 (.237)
6.17 (.243)
1.40 (.055)
1.65 (.065)
7.54 (.297)
7.68 (.303)
8.51 (.335)
8.76 (.345)
0.762 (.030)
0.864 (.034)
{2 Plcs.}
0.050 (.002)
2.62 (.103)
2.72 (.107)
3.68 (.145)
6.27 (.247)
(Base of Lead)
APT15DF60
T
J
= 125C
Drain Current
DrainVoltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J
= 125C
DrainVoltage
Drain Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
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