050-5843 Rev A 3-2004

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

TO-247

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

· Faster Switching

· Avalanche Energy Rated

· Lower Leakage

· Popular TO-247 Package

POWER MOS V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

Drain-Source On-State Resistance

= 10V, I

= 5A)

Zero Gate Voltage Drain Current (V

= 1200V, V

= 0V)

Zero Gate Voltage Drain Current (V

= 960V, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1mA)

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

DS(on)

DSS

GSS

GS(th)

UNIT

Volts

Ohms

µA

Volts

MIN

TYP

MAX

1200

1.500

250

1000

±100

APT1201R5BVFR_SVFR

1200

±30

±40

370

2.96

-55 to 150

300

1300

APT1201R5BVFR

APT1201R5SVFR

1200V 10A

1.500

DYNAMIC CHARACTERISTICS

APT1201R5BVFR_SVFR

050-5843 Rev A 3-2004

, THERMAL IMPEDANCE (°C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.4

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

Repetitive Rating: Pulse width limited by maximum junction

See MIL-STD-750 Method 3471

temperature.

SStarting T

+25°C, L = 26mH, R

, Peak I

= 10A

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

10A,

= 100A/µs,

150°C, R

= 2.0

= 1200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -I

10A)

Peak Diode Recovery

Reverse Recovery Time
(I

= -I

10A,

= 100A/µs)

Reverse Recovery Charge
(I

= -I

10A,

= 100A/µs)

Peak Recovery Current
(I

= -I

10A,

= 100A/µs)

Symbol

RRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

iss

oss

rss

(on)

(off)

Characteristic
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 600V

= 10A @ 25°C

= 15V

= 600V

= 10A @ 25°C

= 1.6

UNIT

MIN

TYP

MAX

10
40

1.3

= 25°C

250

= 125°C

430

= 25°C

1.0

= 125°C

2.5

= 25°C

= 125°C

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.34

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

MIN

TYP

MAX

3700

4440

320

450

150

225

190

285

135

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

(ON) vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

(TH), THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

050-5843 Rev A 3-2004

APT1201R5BVFR_SVFR

Typical Performance Curves

100

200

300

400

500

600

100

125

150

-50

-25

100 125 150

-50

-25

100 125 150

-50

-25

75 100 125 150

D = 0.5 ID [Cont.]

GS = 10V

1.4

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

0.85

1.2

1.1

1.0

0.9

0.8

0.7

0.6

2.5

2.0

1.5

1.0

0.5

0.0

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

4.5V

VGS=10V

VGS=20V

TJ = +25°C

TJ = -55°C

TJ = +25°C

TJ = -55°C

VGS=5.5V, 6V, 7V, 10V &15V

TJ = +125°C

NORMALIZED TO

= 10V @ 0.5 I

D [Cont.]

4.5V

VGS=5.5V, 6V, 7V, 10V &15V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT (AMPERES)

C, CAPACITANCE (pF)

050-5843 Rev A 3-2004

APT1201R5BVFR_SVFR

50 100

500 1200

.01

100

150 200

250

300

350

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TC =+25°C

TJ =+150°C

SINGLE PULSE

0.5

0.1

D = ID [Cont.]

15,000
10,000

5,000

1,000

500

100

OPERATION HERE

LIMITED BY RDS (ON)

TJ =+150°C

TJ =+25°C

Crss

Coss

Ciss

VDS=600V

10µS

100µS

1mS

10mS

100mS
DC

VDS=240V

VDS=120V

APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)
1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

TO-247 Package Outline

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)
1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018) {3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Drain (Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

Revised

8/29/97

1.04 (.041)

1.15 (.045)

13.79 (.543)

13.99 (.551)

Revised

4/18/95

PAK Package Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: APT1201R5BVFR

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: APT1201R5BVFR