MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT12045L2VFR
1200V 28A 0.450
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
POWER MOS V
050-5844 Rev A 4-2004
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
TO-264
MAX
TO-264
Max
FREDFET
G
D
S
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 14A)
Zero Gate Voltage Drain Current (V
DS
= 1200, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
0.450
250
1000
100
2
4
APT12045L2VFR
1200
28
112
30
40
833
6.67
-55 to 150
300
28
50
3200
DYNAMIC CHARACTERISTICS
APT12045L2VFR
050-5844 Rev A 4-2004
Z
JC
, THERMAL IMPEDANCE (C/W)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25C, L = 8.16mH, R
G
=
25
, Peak I
L
= 28A
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5
I
S
I
D
[Cont.],
di
/
dt
= 100A/s,
T
j
150C, R
G
= 2.0
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
28A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -I
D
28A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -I
D
28A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -I
D
28A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 600V
I
D
= 28A @ 25C
V
GS
= 15V
V
DD
= 600V
I
D
=
28A @ 25C
R
G
= 0.6
UNIT
pF
nC
ns
MIN
TYP
MAX
28
112
1.3
18
T
j
= 25C
310
T
j
= 125C
625
T
j
= 25C
2
T
j
= 125C
6
T
j
= 25C
14
T
j
= 125C
24
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.15
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
11370
950
495
605
42
310
16
15
85
14
050-5844 Rev A 4-2004
APT12045L2VFR
Typical Performance Curves
4V
4.5V
5V
5.5
VGS =15V, 10V, 8V & 6V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS(TH)
, THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
0
10
20
30
40
50
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.09
0.08
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Typical Performance Curves
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS
= 10V @ I
D = 14A
I
D = 14A
V
GS = 10V
0.0367
0.0923
0.0215
0.0627F
0.761F
50.8F
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
APT12045L2VFR
050-5844 Rev A 4-2004
1mS
100S
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
TJ =+150C
TJ =+25C
Crss
Ciss
Coss
10mS
1
5
10
50 100
500 1200
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
112
50
10
5
1
12
10
8
6
4
2
0
50,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
Typical Performance Curves
I
D = 28A
VDS=600V
VDS=240V
VDS=960V
TO-264 MAX
TM
(L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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