050-7138 Rev A 4-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O L
MOS
Ultra low R
DS
(
ON
)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
Hermetic TO-254 Package
APT17N80CC3
800V 11.5A 0.320
TO-254
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 11A)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 150C)
Gate-Source Leakage Current (V
GS
= 20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 640V, I
D
= 11.5A, T
J
= 125C)
Repetitive Avalanche Current
6
Repetitive Avalanche Energy
6
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
800
0.28
0.32
0.5
25
250
100
2.10
3
3.9
APT17N80CC3
800
11.5
34.5
20
30
104
0.83
-55 to 150
260
50
17
0.5
670
"COOLMOS
TM
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
DYNAMIC CHARACTERISTICS
APT17N80CC3
050-7138 Rev A 4-2004
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
MIN
TYP
MAX
1.20
62
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 0 to10V
V
DD
= 640V
I
D
= 17A @ 25C
V
GS
= 13V
V
DD
= 400 V
I
D
= 17A
R
G
= 4.7
, T
J
= 125C
MIN
TYP
MAX
2255
1045
55
90
177
11
45
25
15
70
80
6
9
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
11.5
34.5
1
1.2
550
15
6
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -11.5A)
Reverse Recovery Time (I
S
= -11.5A, dl
S
/dt = 100A/s) V
R
= 350V
Reverse Recovery Charge (I
S
= -11.5A, dl
S
/dt = 100A/s) V
R
= 350V
Peak Diode Recovery
dv
/
dt
5
TO-254 Package Outline
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 115.92mH, R
G
=
25
, Peak I
L
= 3.4A
5
I
S
=
-
17A
di
/
dt
=
100A/s
V
R
= 480V
T
J
=
125
C
6 Repetitve avalanche causes additional power losses that can be
calculated as P
AV
=E
AR
*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
PDF 
ZIP