052-6214 Rev B 11-2000
APT20GF120BR
G
C
E
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT20GF120BR
1200V
32A
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Fast IGBT
TO-247
G
C
E
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.3
3.9
0.8
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 350A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 90C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
g
= 11
W
T
C
= 125C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT20GF120BR
1200
1200
20
32
20
64
40
22
200
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
052-6214 Rev B 11-2000
APT20GF120BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
1050
1210
100
150
63
110
95
140
13
20
62
90
15
30
67
130
92
140
93
190
17
34
30
60
105
160
71
140
1.3
3.0
1.5
3.0
2.7
5.0
17
30
35
70
93
140
70
140
2.4
5.0
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.63
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
Q
JC
R
Q
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25
W
,
L = 110H, T
j
= 25C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6214 Rev B 11-2000
APT20GF120BR
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
T
C
=+25C
T
J
=+150C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25C
f = 1MHz
9V
11V
9V
C
ies
C
res
13V
7V
13V
11V
7V
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
C
oes
V
GE
=17 & 15V
Z
q
JC
, THERMAL IMPEDANCE (
C/W)
V
GE
=17 & 15V
T
C
=-55C
T
C
=+25C
T
C
=+150C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25C)
Figure 2, Typical Output Characteristics (T
J
= 150C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
Figure 4, Maximum Forward Safe Operating Area
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100S
1mS
10mS
50
40
30
20
10
0
100
50
10
5
1
20
16
12
8
4
0
50
40
30
20
10
0
60
40
30
20
10
0
2,000
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
V
CE
=240V
V
CE
=600V
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
5
10
50 100
1200
0.01
0.1
1.0
10
50
0
40
80
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
052-6214 Rev B 11-2000
APT20GF120BR
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
10
1
0.1
100
10
1
VCC = 0.66 VCES
VGE = +15V
TJ = +25C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125C
RG = 10
W
VCC = 0.66 VCES
VGE = +15V
RG = 10
W
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
T
J
, JUNCTION TEMPERATURE (C)
R
G
, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
J
, JUNCTION TEMPERATURE (C)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125
150
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125 150
0
4
8
12
16
20
0.1
1.0
10
100
1000
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
0
1.6
1.2
0.8
0.4
0
For Both:
Duty Cycle = 50%
TJ = +125C
Tsink = +90C
Gate drive as specified
Power dissapation = 56W
ILOAD = IRMS of fundamental
I
C
,
COLLECTOR
CURRENT
(AMPERES)
TOTAL SWITCHING ENERGY LOSSES (mJ)
B
V
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
(SAT), COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
I
C
, COLLECTOR CURRENT (AMPERES)
052-6214 Rev B 11-2000
APT20GF120BR
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on)
t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)
V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2uS
T0-247 Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
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