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Электронный компонент: APT20M22JVRU2

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APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
1 7




ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K

Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
200
V
T
c
= 25C
97
I
D
Continuous
Drain
Current
T
c
= 80C
72
I
DM
Pulsed Drain current
388
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
22
m
P
D
Maximum Power Dissipation
T
c
= 25C
450
W
I
AR
Avalanche current (repetitive and non repetitive)
97
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
2500
mJ
IF
A V
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
47
A
V
DSS
= 200V
R
DSon
= 22m
max @ Tj = 25C
I
D
= 97A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V
MOSFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP
Boost chopper
MOSFET Power Module
K
D
G
S
APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
2 7
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
200
V
V
GS
= 0V,V
DS
= 200V
T
j
= 25C
25
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V
T
j
= 125C
250
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 48.5A
22
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= 20
V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
8500
C
oss
Output
Capacitance
1950
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
560
pF
Q
g
Total gate Charge
290
Q
gs
Gate Source Charge
66
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 97A @ T
J
=25C
120
nC
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
25
T
d(off)
Turn-off Delay Time
48
T
f
Fall Time
V
GS
= 15V
V
Bus
= 100V
I
D
= 97A @ T
J
=25C
R
G
= 0.6
8
ns
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.1
1.15
I
F
= 60A
1.4
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
0.9
V
V
R
= 200V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 200V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
94 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =200A/s
T
j
= 25C
21
T
j
= 25C
24
t
rr
Reverse Recovery Time
T
j
= 125C
48
ns
T
j
= 25C
3
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
6
A
T
j
= 25C
33
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 133V
di/dt =200A/s
T
j
= 125C
150
nC
t
rr
Reverse Recovery Time
31
ns
Q
rr
Reverse Recovery Charge
335
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 133V
di/dt =1000A/s
T
j
= 125C
19 A
APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
3 7

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET 0.28
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g



Typical
MOSFET
Performance Curve

APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
4 7
APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
5 7
Typical Diode Performance Curve
APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
6 7
APT20M22JVRU2
A
P
T
20M
22J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
7 7
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source
Gate
Drain
Cathode