050-7270 Rev B 3-2006

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

Drain-Source On-State Resistance

= 10V, I

= 8A)

Zero Gate Voltage Drain Current (V

= 600V, V

= 0V)

Zero Gate Voltage Drain Current (V

= 480V, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1mA)

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

DS(on)

DSS

GSS

GS(th)

UNIT

Volts

Ohms

µA

Volts

MIN

TYP

MAX

600

0.400

250

1000

±100

APT6040B_SVFR(G)

600

±30

±40

250

2.0

-55 to 150

300

960

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

· Faster Switching

· Avalanche Energy Rated

· Lower Leakage

TO-247 or Surface Mount D

PAK Package

POWER MOS V

FREDFET

FAST RECOVERY BODY DIODE

BVFR

SVFR

TO-247

PAK

APT6040BVFR

APT6040SVFR

APT6040BVFRG*APT6040SVFRG*

G Denotes RoHS Compliant, Pb Free Terminal Finish.

600V 16A 0.40

050-7270 Rev B 3-2006

DYNAMIC CHARACTERISTICS

APT6040B_SVFR(G)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -16A)

Peak Diode Recovery

Reverse Recovery Time
(I

= -16A,

= 100A/µs)

Reverse Recovery Charge
(I

= -16A,

= 100A/µs)

Peak Recovery Current
(I

= -16A,

= 100A/µs)

Symbol

RRM

UNIT

Amps

Volts

V/ns

µC

Amps

MIN

TYP

MAX

16
64

1.3

= 25°C

250

= 125°C

500

= 25°C

1.9

= 125°C

= 25°C

= 125°C

Symbol

MIN

TYP

MAX

0.50

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

4 Starting T

+25°C, L = 7.50mH, R

, Peak I

= 16A

numbers reflect the limitations of the test circuit rather than the

device itself.

16A

700A/µs

600V

150

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

iss

oss

rss

d(on)

d(off)

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 300V

= 16A @ 25°C

= 15V

= 300V

= 16A @ 25°C

= 1.6

MIN

TYP

MAX

2600

3120

305

425

125

180

115

170

UNIT

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

, THERMAL IMPEDANCE (°C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

050-7270 Rev B 3-2006

Typical Performance Curves

APT6040B_SVFR(G)

D = 8A

GS = 10V

1.5

1.4

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

2.5

2.0

1.5

1.0

0.5

0.0

VDS> ID (ON) x RDS (ON)MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

4.5V

VGS=6V, 7V, 10V & 15V

VGS=10V

VGS=20V

TJ = +125°C

TJ = +25°C

TJ = -55°C

4.5V

5.5V

VGS=7V, 10V

VGS=15V

5.5V

NORMALIZED TO

= 10V @ 8A

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

(ON) vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

(TH), THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

100

150

200

250

100

125

150

-50

-25

100 125 150

-50

-25

100 125 150

-50

-25

75 100 125 150

050-7270 Rev B 3-2006

APT6040B_SVFR(G)

50 100

600

.01

100

150

200

250

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TC =+25°C

TJ =+150°C

SINGLE PULSE

100

0.5

0.1

OPERATION HERE

LIMITED BY RDS (ON)

TJ =+150°C

TJ =+25°C

Crss

Coss

Ciss

10,000

5,000

1,000

500

100

VDS=120V

VDS=480V

D = 8A

10µS

1mS

10mS

100mS
DC

100µS

VDS=300V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT

(AMPERES)

C, CAPACITANCE (pF)

APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)
1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)
1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018) {3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Drain (Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

TO-247 (BVFR) Package Outline

PAK (SVFR) Package Outline

e1 SAC: Tin, Silver, Copper

e3 100% Sn

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