053-4243 Rev B 5-2006
New Diode Data Sheet By Darel Bidwell
PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-220 Isolated
Full Package
Low Forward Voltage
Low Leakage Current
Avalanche Energy Rated
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
Snubber Diode
PFC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
600V 8A
APT8DQ60K3CT
APT8DQ60K3CTG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings Per Leg: T
C
= 25C unless otherwise specified.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
A
pF
MIN
TYP
MAX
2.0
2.4
2.5
1.5
25
500
16
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 8A
I
F
= 16A
I
F
= 8A, T
J
= 125C
V
R
= 600V
V
R
= 600V, T
J
= 125C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 82C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
C
APT8DQ60K3CT(G)
600
8
9.6
110
20
-55 to 175
300
1 - Anode 1
2 - Common Cathode
3 - Anode 2
1
3
2
TO-220
1 2
3
MIN
TYP
MAX
-
14
-
19
-
17
-
2
-
-
90
-
160
-
3
-
-
43
-
250
-
11
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 8A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25C
I
F
= 8A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125C
I
F
= 8A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
JC
W
T
Torque
MIN
TYP
MAX
5.4
0.07
1.9
10
1.1
UNIT
C/W
oz
g
lbin
Nm
APT8DQ60K3CT(G)
DYNAMIC CHARACTERISTICS
053-4243 Rev B 5-2006
New Diode Data Sheet By Darel Bidwell
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
100
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
6.0
5.0
4.0
3.0
2.0
1.0
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
D = 0.9
1.62
1.49
2.30
0.0007
0.247
1.76
Dissipated Power
(Watts)
T
J
(C)
T
C
(C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
053-4243 Rev B 5-2006
APT8DQ60K3CT(G)
TYPICAL PERFORMANCE CURVES
T
J
= 125C
V
R
= 400V
4A
8A
16A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
120
100
80
60
40
20
0
14
12
10
8
6
4
2
0
Duty cycle = 0.5
T
J
= 175C
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
12
10
8
6
4
2
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE
K
f
, DYNAMIC PARAMETE
RS
(pF)
(Normalized to X000A/
s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (C)
Case Temperature (C)
Figure 6. Dynamic Parameters vs. Junction Temperature
Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
30
25
20
15
10
5
0
400
350
300
250
200
150
100
50
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
-di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0
0.5 1.0
1.5 2.0
2.5 3.0 3.5
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
Q
rr
, REVERSE RECOVERY CHARGE
I
F
,
FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT
t
rr
, REVERSE RECOVERY TIME
(A)
(ns)
T
J
= 125C
V
R
= 400V
16A
8A
4A
T
J
= 125C
V
R
= 400V
16A
4A
8A
T
J
= 175C
T
J
= -55C
T
J
= 25C
T
J
= 125C
APT8DQ60K3CT(G)
053-4243 Rev B 5-2006
100% Sn
TO-220 (K3CT) Package Outline
e3
Dimensions in Millimeters and (Inches)
Anode
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
4.80 (.189)
4.60 (.181)
2.80 (.110)
2.60 (.102)
3.40 (.133) Dia.
3.10 (.123)
16.00 (.630)
15.80 (.622)
6.35 (.250)
MAX.
Anode
7.10 (.280)
6.70 (.263)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.85 (.112)
2.65 (.104)
3.70 (.145)
2.20 (.126)
0.48 (.019)
0.44 (.017)
5.33 (.210)
4.83 (.190)
2.79 (.110)
2.29 (.090)
Cathode
APT6038BLL
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
Qrr - Area Under the Curve Defined by I
RRM
and trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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