APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
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APT website http://www.advancedpower.com
1 6
S3/S 4
G5
D5
S5
S5/ S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
800
V
T
c
= 25C
28
I
D
Continuous
Drain
Current
T
c
= 80C
21
I
DM
Pulsed Drain current
110
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
150
m
P
D
Maximum Power Dissipation
T
c
= 25C
277
W
I
AR
Avalanche current (repetitive and non repetitive)
24
A
E
AR
Repetitive Avalanche Energy
0.5
E
AS
Single Pulse Avalanche Energy
670
mJ
V
DSS
= 800V
R
DSon
= 150m
max @ Tj = 25C
I
D
= 28A @ Tc = 25C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual Common Source
Super Junction MOSFET
Power Module
APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
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APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 375A
800
V
V
GS
= 0V,V
DS
= 800V
T
j
= 25C
50
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V
T
j
= 125C
375
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 14A
150
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2mA
2.1 3 3.9 V
I
GSS
Gate Source Leakage Current
V
GS
= 20
V, V
DS
= 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
4507
C
oss
Output
Capacitance
2092
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
108
pF
Q
g
Total gate Charge
180
Q
gs
Gate Source Charge
22
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 28A
90
nC
T
d(on)
Turn-on
Delay
Time
10
T
r
Rise Time
13
T
d(off)
Turn-off Delay Time
83
T
f
Fall Time
Inductive switching @125C
V
GS
= 15V
V
Bus
= 533V
I
D
= 28A
R
G
= 2.5
35
ns
E
on
Turn-on Switching Energy
486
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 533V
I
D
= 28A,
R
G
= 2.5
278
J
E
on
Turn-on Switching Energy
850
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 533V
I
D
= 28A,
R
G
= 2.5
342
J
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
28
I
S
Continuous Source current
(Body diode)
Tc = 80C
21
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 28A
1.2
V
dv/dt
Peak Diode Recovery
6
V/ns
t
rr
Reverse Recovery Time
T
j
= 25C
550
ns
Q
rr
Reverse Recovery Charge
I
S
= - 28A
V
R
= 400V
di
S
/dt = 200A/s
T
j
= 25C
30
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 28A di/dt 200A/s V
R
V
DSS
T
j
150C
APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
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APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.45 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTC80TDU15P
A
P
T
C
80T
D
U
15P
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APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
V
DS
> I
D
(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
20
30
40
50
60
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
esi
st
an
ce
Normalized to
V
GS
=10V @ 14A
0
5
10
15
20
25
30
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
Dr
a
i
n
C
u
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
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v 0 S
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pt
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, 2004
APT website http://www.advancedpower.com
5 6
0.90
0.95
1.00
1.05
1.10
1.15
-50
0
50
100
150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
a
i
n
t
o
S
our
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
N
o
r
m
al
i
z
ed
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce
O
N
r
esi
st
a
n
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
= 14A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
0
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
limited by
R
DSon
Single pulse
T
J
=150C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=160V
V
DS
=400V
V
DS
=640V
0
2
4
6
8
10
12
14
16
0
40
80
120
160
200
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
I
D
=28A
T
J
=25C
APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
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v 0 S
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pt
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, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
10
20
30
40
50
I
D
, Drain Current (A)
td
(o
n
)
a
n
d
td
(o
ff
)
(
n
s
)
V
DS
=533V
R
G
=2.5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
10
20
30
40
50
I
D
, Drain Current (A)
t
r
a
nd
t
f
(n
s
)
V
DS
=533V
R
G
=2.5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
300
600
900
1200
1500
10
20
30
40
50
I
D
, Drain Current (A)
E
on a
nd
E
o
f
f
(
J
)
V
DS
=533V
R
G
=2.5
T
J
=125C
L=100H
E
on
E
off
0
500
1000
1500
2000
2500
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
J)
Switching Energy vs Gate Resistance
V
DS
=533V
I
D
=28A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
6
8 10 12 14 16 18 20 22 24 26
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=533V
D=50%
R
G
=2.5
T
J
=125C
T
C
=125C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2
0.6
1
1.4
1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
eve
r
s
e
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon
Technologies AG".
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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