APTGF150X60E3
A
P
T
G
F
1
5
0
X
6
0
E
3
R
e
v
0
J
u
l
y
,
2
0
0
3
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
225
I
C
Continuous Collector Current
T
C
= 80C
150
I
CM
Pulsed Collector Current
T
C
= 25C
450
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
700
W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
400A@480V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
V
CES
= 600V
I
C
= 150A @ Tc = 80C
Application
AC Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
APTGF150X60E3
A
P
T
G
F
1
5
0
X
6
0
E
3
R
e
v
0
J
u
l
y
,
2
0
0
3
APT website http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ T
j
= 25C unless otherwise specified
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500A
600
V
T
j
= 25C
1
500
A
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1
mA
T
j
= 25C
1.7
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 200A
T
j
= 125C
2.2
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 4 mA
4.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
Input Capacitance
9000
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz
800
pF
T
d(on)
Turn-on Delay Time
163
T
r
Rise Time
43
T
d(off)
Turn-off Delay Time
253
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
33
ns
T
d(on)
Turn-on Delay Time
180
T
r
Rise Time
49
T
d(off)
Turn-off Delay Time
285
T
f
Fall Time
41
ns
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 200A
R
G
= 1.5
6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
T
j
= 25C
1.25
1.6
V
F
Diode Forward Voltage
I
F
= 200A
V
GE
= 0V
T
j
= 125C
1.2
V
E
r
Reverse Recovery Energy
I
F
= 200A
V
R
= 300V
di/dt =800A/s
T
j
= 125C
4.1
mJ
T
j
= 25C
13
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 300V
di/dt =800A/s T
j
= 125C
20
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.18
R
thJC
Junction to Case
Diode
0.32
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
Torque Mounting torque
To heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
APTGF150X60E3
A
P
T
G
F
1
5
0
X
6
0
E
3
R
e
v
0
J
u
l
y
,
2
0
0
3
APT website http://www.advancedpower.com
3 - 3
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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