APTGF360U60D4
A
P
T
G
F
360
U
60D
4
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
450
I
C
Continuous
Collector
Current
T
C
= 80C
360
I
CM
Pulsed Collector Current
T
C
= 25C
720
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1560 W
RBSOA Reverse Bias Safe Operation Area
T
j
= 125C
720A@520V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
5
3
4
1
2
V
CES
= 600V
I
C
= 360A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
NPT IGBT Power Module
APTGF360U60D4
A
P
T
G
F
360
U
60D
4
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
T
j
= 25C
1
500
A
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1 mA
T
j
= 25C
1.95 2.45
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 360A
T
j
= 125C
2.2
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 6mA
4.5
5.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
17
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz
1.6
nF
T
d(on)
Turn-on
Delay
Time
150
T
r
Rise Time
72
T
d(off)
Turn-off Delay Time
350
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 400A
R
G
= 2.2
50
ns
T
d(on)
Turn-on
Delay
Time
175
T
r
Rise Time
75
T
d(off)
Turn-off Delay Time
375
T
f
Fall Time
55
ns
E
on
Turn on Energy
9
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 400A
R
G
= 2.2
15
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
T
j
= 25C
1.25
1.6
V
F
Diode Forward Voltage
I
F
= 400A
V
GE
= 0V
T
j
= 125C
1.2
V
T
j
= 25C
27
Q
rr
Reverse Recovery Charge
I
F
= 400A
V
R
= 300V
di/dt =4400A/s T
j
= 125C
44
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.08
R
thJC
Junction
to
Case
Diode
0.15
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
M6 3
5
Torque Mounting
torque
M4 1
2
N.m
Wt Package
Weight
420 g
APTGF360U60D4
A
P
T
G
F
360
U
60D
4
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
3 - 3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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