APTGT400A120
A
P
T
G
T
400
A
120 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q2
0/VBUS
Q1
VBUS
OUT
G1
G2
E2
E1
OUT
VBUS
E1
G1
0/VBUS
G2
E2
Symbol Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
560 *
I
C
Continuous
Collector
Current
T
C
= 80C
400
I
CM
Pulsed Collector Current
T
C
= 25C
800
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1785 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
800A @ 1100V
V
CES
= 1200V
I
C
= 400A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Fast Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Phase leg
Fast Trench + Field Stop IGBT
Power Module
APTGT400A120
A
P
T
G
T
400
A
120 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
1.2
mA
T
j
= 25C
1.4 1.7 2.1
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 400A
T
j
= 125C
2.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 4 mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
800
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
28
C
oes
Output
Capacitance
1.6
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
1.2
nF
T
d(on)
Turn-on
Delay
Time
260
T
r
Rise Time
30
T
d(off)
Turn-off Delay Time
420
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 400A
R
G
= 1.2
80
ns
T
d(on)
Turn-on
Delay
Time
290
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
520
T
f
Fall Time
100
ns
E
on
Turn on Energy
40
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 300A
R
G
= 1.2
40
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
750
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
1000
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
400
A
T
j
= 25C
1.6
2.1
V
F
Diode Forward Voltage
I
F
= 400A
V
GE
= 0V
T
j
= 125C
1.6
V
T
j
= 25C
170
t
rr
Reverse Recovery Time
T
j
= 125C
280
ns
T
j
= 25C
36
Q
rr
Reverse Recovery Charge
I
F
= 400A
V
R
= 600V
di/dt =3500A/s
T
j
= 125C
72
C
APTGT400A120
A
P
T
G
T
400
A
120 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.07
R
thJC
Junction
to
Case
Diode
0.13
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTGT400A120
A
P
T
G
T
400
A
120 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
100
200
300
400
500
600
700
800
0
1
2
3
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
100
200
300
400
500
600
700
800
0
1
2
3
4
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
T
J
=125C
0
100
200
300
400
500
600
700
800
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
20
40
60
80
100
0
100 200 300 400 500 600 700 800
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 1.2
T
J
= 125C
Eon
Eoff
Er
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 400A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
100
200
300
400
500
600
700
800
900
0
300
600
900
1200
1500
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=1.2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (
C
/
W
)
IGBT
APTGT400A120
A
P
T
G
T
400
A
120 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=125C
0
100
200
300
400
500
600
700
800
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0
100
200
300
400
500
I
C
(A)
F
m
ax
,
O
p
er
at
i
n
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=600V
D=50%
R
G
=1.2
T
J
=125C
Tc=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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