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Электронный компонент: APTGT450SK60

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APTGT450SK60
A
P
T
G
T
450
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5




Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q1
G1
0/VBUS
OUT
E1
CR2
VBUS

VBUS
OUT
0/VBUS
E1
G1
Symbol Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
550
I
C
Continuous
Collector
Current
T
C
= 80C
450
I
CM
Pulsed Collector Current
T
C
= 25C
600
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1750 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
900A @ 550V
V
CES
= 600V
I
C
= 450A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration

Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile

Buck chopper
Trench + Field Stop IGBT
Power Module
APTGT450SK60
A
P
T
G
T
450
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified

Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
500
A
T
j
= 25C
1.4 1.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 450A
T
j
= 150C
1.5
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
37
C
oes
Output
Capacitance
2.3
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
1.1
nF
T
d(on)
Turn-on
Delay
Time
130
T
r
Rise Time
55
T
d(off)
Turn-off Delay Time
250
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 450A
R
G
= 2.2
60
ns
T
d(on)
Turn-on
Delay
Time
145
T
r
Rise Time
60
T
d(off)
Turn-off Delay Time
320
T
f
Fall Time
80
ns
E
on
Turn on Energy
7.8
E
off
Turn off Energy
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 450A
R
G
= 2.2
15.7
mJ

Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
500
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 150C
750
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
450
A
T
j
= 25C
1.5
1.9
V
F
Diode Forward Voltage
I
F
= 450A
V
GE
= 0V
T
j
= 150C
1.4
V
T
j
= 25C
125
t
rr
Reverse Recovery Time
T
j
= 150C
220
ns
T
j
= 25C
20.3
Q
rr
Reverse Recovery Charge
I
F
= 450A
V
R
= 300V
di/dt =4000A/s
T
j
= 150C
42.8
C

APTGT450SK60
A
P
T
G
T
450
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.085
R
thJC
Junction
to
Case
Diode
0.14
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
175
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTGT450SK60
A
P
T
G
T
450
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
T
J
= 150C
Transfert Characteristics
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
200
400
600
800
1000
5
6
7
8
9
10
11
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
5
10
15
20
25
30
35
0
200
400
600
800
1000
I
C
(A)
E (
m
J
)
V
CE
= 300V
V
GE
= 15V
R
G
= 2.2
T
J
= 150C
Eon
Eon
Eoff
Eoff
Er
0
10
20
30
40
50
0
2
4
6
8
10
12
14
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 300V
V
GE
=15V
I
C
= 450A
T
J
= 150C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
200
400
600
800
1000
0
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=150C
R
G
=2.2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
r
m
a
l
I
m
pe
da
n
c
e
(

C
/
W
)
IGBT
APTGT450SK60
A
P
T
G
T
450
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=150C
0
200
400
600
800
1000
0
0.4
0.8
1.2
1.6
2
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
200
400
600
800
I
C
(A)
F
m
ax
,
O
p
er
at
i
n
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=300V
D=50%
R
G
=2.2
T
J
=150C
T
c
=85C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
r
m
a
l
I
m
p
e
da
n
c
e
(

C
/
W
)
Diode


















APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.