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Электронный компонент: APTGT75SK120T

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APTGT75SK120T
A
P
T
G
T
7
5
S
K
120T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5






Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
110
I
C
Continuous
Collector
Current
T
C
= 80C
75
I
CM
Pulsed Collector Current
T
C
= 25C
175
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
357 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
150A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBU S
NTC1
OUT
Q1
VBUS
NTC2
0/VBUS SENSE
G1
E1



NTC2
OUT
OUT
E1
NTC1
VBUS
0/VBUS
SENSE
0/VBUS
SENSE
0/VBUS
G1
V
CES
= 1200V
I
C
= 75A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring

Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
Fast Trench + Field Stop IGBT
Power Module
APTGT75SK120T
A
P
T
G
T
7
5
S
K
120T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
250
A
T
j
= 25C
1.7 2.1
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
= 15V
I
C
= 75A
T
j
= 125C
2.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2 mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
5345
C
oes
Output
Capacitance
280
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
240
pF
T
d(on)
Turn-on
Delay
Time
280
T
r
Rise Time
40
T
d(off)
Turn-off Delay Time
450
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
75
ns
T
d(on)
Turn-on
Delay
Time
290
T
r
Rise Time
45
T
d(off)
Turn-off Delay Time
550
T
f
Fall Time
90
ns
E
on
Turn-on Switching Energy
7
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
8
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
75
A
T
j
= 25C
1.5
2.0
V
F
Diode Forward Voltage
I
F
= 75A
T
j
= 125C
1.4
V
T
j
= 25C
150
t
rr
Reverse Recovery Time
T
j
= 125C
250
ns
T
j
= 25C
7
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 600V
di/dt =2000A/s
T
j
= 125C
13.5
C
APTGT75SK120T
A
P
T
G
T
7
5
S
K
120T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K


-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.35
R
thJC
Junction
to
Case
Diode
0.48
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
Torque Mounting torque
To Heatsink
M5
1.5
4.7 N.m
Wt Package
Weight
160
g

Package outline
(dimensions in mm)

T: Thermistor temperature
R
T
: Thermistor value at T
APTGT75SK120T
A
P
T
G
T
7
5
S
K
120T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
0
1
2
3
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
25
50
75
100
125
150
0
1
2
3
4
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
T
J
=125C
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
2
4
6
8
10
12
14
16
0
25
50
75
100
125
150
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 4.7
T
J
= 125C
Eon
Eoff
Er
0
2
4
6
8
10
12
14
16
0
4
8
12
16
20
24
28
32
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 75A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0
400
800
1200
1600
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l Im
p
e
d
a
n
c
e
(

C
/
W
)
IGBT
APTGT75SK120T
A
P
T
G
T
7
5
S
K
120T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=125C
0
25
50
75
100
125
150
175
200
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0
20
40
60
80
100
120
I
C
(A)
F
m
ax, O
p
e
r
at
in
g
F
r
eq
u
e
n
c
y
(
k
H
z
)
V
CE
=600V
D=50%
R
G
=4.7
T
J
=125C
T
c
=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
pe
da
nc
e
(C
/
W
)
Diode

















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