MS3011
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
DESCRIPTION:
DESCRIPTION:
The MS3011 is a hermetically sealed NPN power transistor
featuring a unique matrix structure. This device is specifi-
cally designed for Class A linear applications to provide
high gain and high output power at the 1.0 dB compression
point.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation
5.5
W
V
CE
Collector-Emitter Bias Voltage
20
V
I
C
Device Current
500
mA
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-65 to +200
C
Thermal Data
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
17
C/W
Features
2.0 GHz
P
OUT
= 30.0 dBm
G
P
= 7.0 dB MINIMUM
15:1 VSWR @ RATED CONDITIONS
GOLD METALIZATION
COMMON EMITTER CONFIGURATION
12-10-2002
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