eroflex Circuit Technology - Advanced Multichip Modules SCD1666A REV A 9/12/97
General Description
Utilizing AMD's Sector Erase
Flash Memory Die, the
ACT-F2M32A is a high speed,
64 megabit CMOS flash
multichip module (MCM)
designed for full temperature
range, military, space, or high
reliability applications.
The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or
erase sector groups of
256Kbytes (A sector group
consists of 4 adjacent sectors of
64Kbytes each).
The command register is
written by bringing WE to a logic
low level (V
IL
), while CE is low
and OE is high (V
IH
)
. Reading is
accomplished by chip Enable
(CE) and Output Enable (OE)
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.
Features
Block Diagram CQFP(F18)
s
4 Low Voltage/Power AMD 2M x 8 FLASH Die in One
MCM Package
s
Overall Configuration is 2M x 32
s
+5V Power Supply / +5V Programing Operation
s
Access Times of 90, 120 and 150 ns
s
Erase/Program Cycles 100,000 Minimum
s
Sector erase architecture (Each Die)
q
32 uniform sectors of 64 Kbytes each
q
Any combination of sectors can be erased. Also
supports full chip erase
q
Sector group protection is user definable
s
Embedded Erase Algorithims Automatically
pre-programs and erases the die or any sector
s
Embedded Program Algorithims Automatically
programs and verifies data at specified address
s
Ready/Busy output (RY/BY) Hardware method for
detection of program or erase cycle completion
s
Hardware RESET pin Resets internal state machine
to the read mode
s
Erase Suspend/Resume Supports reading or
programming data to a sector not being erased
s
Packaging Hermetic Ceramic
q
68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s
Internal Decoupling Capacitors for Low Noise
Operation
s
Commercial, Industrial and Military Temperature
Ranges
s
MIL-PRF-38534 Compliant MCMs Available
CIRCUIT TECHNOLOGY
Pin Description
I/O
0-31
Data I/O
A
020
Address Inputs
WE
1-4
Write Enable
CE
1-4
Chip Enables
OE
Output Enable
RESET
Reset
V
CC
Power Supply
GND
Ground
NC
Not Connected
2Mx8
2Mx8
2Mx8
2Mx8
CE
4
OE
A
0
A
20
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
8
8
8
8
CE
3
WE
4
WE
3
WE
2
WE
1
CE
1
CE
2
RESET
Optional Configuration
www.aeroflex.com/act1.htm
Block Diagram CQFP(F18)
Standard Configuration
Pin Description
I/O
0-31
Data I/O
A
020
Address Inputs
WE
Write Enables
CE
1-4
Chip Enables
OE
Output Enable
RY/BY
Ready/Busy
RESET
Reset
V
CC
Power Supply
GND
Ground
NC
Not Connected
CE
4
OE
A
0
A
20
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
8
8
8
8
CE
3
WE
CE
1
CE
2
RESET
RY/BY
2Mx8
2Mx8
2Mx8
2Mx8
Sector Erase
FLASH Multichip Module
ACTF2M32A High Speed 64 Megabit
Aeroflex Circuit Technology
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
2
The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94"
SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment
temperature range of -55C to +125C.
The ACT-F2M32A can be programmed (both read and write functions) in-system using
the +5.0V V
CC
power supply. A 12.0V V
PP
is not required for programming or erase
operations. The end of program or erase is detected by the RY/BY pin, Data Polling of
DQ7, or by the Toggle bit (DQ6).
The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.
Each block can be independently erased and programmed 100,000 times at +25C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash
Memory, see the AMD datasheet (Publication 18805).
General Description, Cont'd
,
Aeroflex Circuit Technology
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
3
Absolute Maximum Ratings
Parameter
Range
Units
Case Operating Temperature Range
-55 to +125
C
Storage Temperature Range
-65 to +150
C
Voltage with Respect to GND (All pins except A
9)
(1)
-2.0 to +7.0
V
Voltage on Pins A
9,
OE, RESET
(2)
-2.0 to +13.5
V
Vcc Supply Voltage with Respect to Ground
(1)
-2.0 to +7.0
V
Output Short Circuit Current
(3)
200
mA
Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on
input/output pins is V
CC
+ 0.5V, which may overshoot to V
CC
+ 2.0V for periods up to 20ns.
2. Minimum DC input voltage on A
9
,OE, RESET pins is -0.5V. During Voltage transitions, A
9
, OE & RESET may overshoot GND to -2.0V for periods up to 20ns.
Maximum DC input voltage on A
9
is +12.5V which may overshoot to 14V for periods up to 20ns.
3. No more than one output shorted to ground for no more than 1 second.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional
operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Minimum
Maximum
Units
V
CC
5V Power Supply Voltage (10%)
+4.5
+5.5
V
V
IH
Input High Voltage (CMOS)
0.7 x V
CC
V
cc
+ 0.3
V
V
IL
Input Low Voltage
-0.5
+0.8
V
T
C
Operating Temperature (Military)
-55
+125
C
Capacitance
(f = 1MHz, T
C
= 25
C, Standard Configuration)
Symbol
Parameter
Maximum
Units
C
AD
A0 A20
Capacitance
50
pF
C
OE
OE Capacitance
50
pF
C
CE
CE Capacitance
20
pF
C
RESET
RESET Capacitance
50
pF
C
WE
WE Capacitance
60
pF
C
RY
/
BY
RY/BY Capacitance
50
pF
C
I
/
O
I/O0 I/O31 Capacitance
20
pF
Capacitance Guaranteed by design, but not tested.
DC Characteristics CMOS Compatible
(T
C
= -55
C to +125
C, V
CC
= +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Sym
Conditions
Min
Max
Units
Input Load Current
I
IL
V
CC
= V
CC
Max., V
IN
= V
CC
or GND
10
A
A9 Leakage Current
I
LIT
V
CC
= V
CC
Max., A9 = +12V
50
A
Output Leakage Current
I
LO
V
CC
= V
CC
Max., V
IN
= GND to V
CC
10
A
Vcc Active Read Current
I
CC
1
CE = V
IL
, OE = V
IH
160
mA
Vcc Active Program/Erase Current
(1)
I
CC
2
CE = V
IL
, OE = V
IH
240
mA
Vcc Standby Current
I
CC
3
V
CC
= V
CC
Max., CE = RESET = V
CC
0.3V
4
mA
Vcc Standby Current (Reset)
I
CC
4
V
CC
= V
CC
Max., RESET = V
CC
0.3V
4
mA
Output Low Voltage
V
OL
V
CC
= V
CC
Min., I
OL
= 12 mA
0.45
V
Output High Voltage
V
OH
1
V
CC
= V
CC
Min., I
OH
= -2.5 mA
0.85 x
V
CC
V
V
OH
2
V
CC
= V
CC
Min., I
OH
= -100 A
V
CC
-
0.4V
V
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
4
AC Characteristics Write/Erase/Program Operations WE Controlled
(T
C
= -55
C to +125
C, V
CC
= +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Parameter
Symbol
Standard
Parameter
Symbol
JEDEC
90ns
120ns
150ns
Units
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
t
AVAV
90
120
150
ns
Address Setup to WE Going Low
t
AS
t
AVWL
0
0
0
ns
Address Hold Time from CE High
t
AH
t
WLAX
45
50
50
ns
Data Setup to WE Going High
t
DS
t
DVWH
45
50
50
ns
Data Hold Time from WE High
t
DH
t
WHDX
0
0
0
ns
Output Enable Hold Time
Read
t
OEH
0
0
0
ns
Toggle Bit I and Data Polling
10
10
10
ns
Read Recover Time Before Write
(OE High to WE Low)
t
GHWL
t
GHWL
0
0
0
ns
CE Setup Time from WE Low
t
CS
t
ELWL
0
0
0
ns
CE Hold Time from WE High
t
CH
t
WHEH
0
0
0
ns
WE Pulse Width
t
WP
t
WLWH
45
50
50
ns
WE Pulse Width High
t
WPH
t
WHWL
20
20
20
ns
Byte Programming Operation
t
WHWH
1
t
WHWH
1
8
8
8
s
Sector Erase Operation
t
WHWH
2
t
WHWH
2
15
15
15
Sec
V
CC
Set-Up Time
t
VCS
50
50
50
s
Rise Time to V
ID
t
VIDR
500
500
500
ns
OE Setup Time to WE Active
t
OESP
4
4
4
s
Reset Pulse Width
t
RP
500
500
500
ns
Program/Erase Valid to RY/BY
Delay
t
BUSY
40
50
60
ns
Notes:
1. Not 100% tested.
AC Characteristics Read Only Operations
(T
C
= -55
C to +125
C, V
CC
= +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Parameter
Symbol
Standard
Parameter
Symbol
JEDEC
90ns
120ns
150ns
Units
Min Max
Min Max
Min Max
Read Cycle Time
(1)
t
RC
t
AVAV
90
120
150
ns
Address to Output Delay
t
ACC
t
AVQV
90
120
150
ns
CE to Output Delay
t
CE
t
ELQV
90
120
150
ns
OE to Output Delay
t
OE
t
GLQV
40
50
55
ns
CE to Output in High Z
(1)
t
DF
t
EHQZ
20
30
35
ns
OE to Output in High Z
(1)
t
DF
t
GHQZ
20
0
30
0
35
ns
Output Hold from Addresses, CE or OE Change, Whichever Occurs
First
t
OH
t
AXQX
0
0
0
ns
RESET Low to Read Mode
(1)
t
READY
20
20
20
s
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
5
AC Characteristics Write/Erase/Program Operations CE Controlled
(T
C
= -55
C to +125
C, V
CC
= +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Parameter
Symbol
Standard
Parameter
Symbol
JEDEC
90ns
120ns
150ns
Units
Min
Max
Min
Max
Min
Max
Write Cycle Time
(1)
t
WC
t
AVAV
90
120
150
ns
Address Setup to CE Going Low
t
AS
t
AVEL
0
0
0
ns
Address Hold Time from CE Low
t
AH
t
ELAX
45
50
50
ns
Data Setup to CE Going High
t
DS
t
DVEH
45
50
50
ns
Data Hold Time from CE High
t
DH
t
EHDX
0
0
0
ns
Output Enable Setup Time
(1)
t
OES
0
0
0
ns
Output Enable Hold Time
(1)
Read
t
OEH
0
0
0
ns
Toggle Bit I and Data Polling
10
10
10
ns
Read Recover Time Before Write
(OE High to WE Low)
t
GHEL
t
GHEL
0
0
0
ns
CE Setup Time from WE Low
t
WS
t
WLEL
0
0
0
ns
WE Hold Time from CE High
t
WH
t
EHWH
0
0
0
ns
WE Pulse Width
t
CP
t
ELEH
45
50
50
ns
WE Pulse Width High
t
CPH
t
ELEL
20
20
20
ns
Byte Programming Operation
t
WHWH
1
t
WHWH
1
8
8
8
s
Sector Erase Operation
t
WHWH
2
t
WHWH
2
15
15
15
Sec
Notes:
1. Not 100% tested.
PDF 
ZIP