Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Features
s
Integrated electroabsorptive modulator
s
1.5
m wavelength
s
Characterized for 10 Gbits/s operation
s
For use up to 80 km at 10 Gbits/s
s
Low modulation voltage
s
Temperature stabilized
s
Available with and without integral driver IC
s
Wavelength selectable to ITU-T standards
s
Ultrastable wavelength aging for DWDM
Applications
s
SONET/SDH applications
s
Ultrahigh capacity WDM system application
s
High-speed data communication
s
Digitized video
Description
The E2560 (without integral driver IC) and E2580
(with integral driver IC) are devices for 10 Gbits/s
DWDM or TDM transmission applications, which inte-
grate a CW laser with an electroabsorptive modulator
in the same semiconductor chip, and are an exten-
sion of Lucent Technologies Microelectronics
Groups' existing E2500 series of devices. Both types
use a small-profile Gilbert GPO connector to handle
the RF signal. The device is typically coupled with a
number of erbium-doped fiber amplifiers, such as
Lucent Technologies' 1724-series, in order to ensure
that sufficient optical power reaches the receiver.
These devices can replace external modulators
which are often bulkier, more expensive, and require
more complex drive electronics than the EML. Both
E2560 and E2580 are available for transmission dis-
tances of 40 km and 80 km. The package also con-
tains a thermoelectric cooler, thermistor, rear facet
monitor photodiode, and an optical isolator.
Advance Data Sheet
E2560/E2580-Type 10 Gbits/s EML Modules
January 1999
2
Lucent Technologies Inc.
Description
(continued)
The nominal input impedance of the E2560 version is 50
. The package is qualified to the Bellcore TA-TSY-
000468 standard.
Both E2560 and E2580 are available in a range of ITU-T wavelengths for use in DWDM systems operating at 10
Gbits/s per channel. The device has excellent wavelength stability, supporting operation at 100 GHz channel spac-
ing over 20 years (assuming an end-of-life aging condition of <
100 pm). Typically, no external wavelength stabili-
zation is required in systems of this type, using Lucent's E2500 series EMLs. The package also offers excellent
stability of wavelength vs. case temperature, with a maximum coefficient of 0.5 pm/
C.
Module Characteristics
Table 1. Module Characteristics
Pin Information
Table 2. Pin Descriptions
Note: For full details of pin functions and required bias levels for the version with the IC, refer to
E2580 EML with Integral Driver IC: Pin
Definitions And Operation
Application Note (TBD):
Package Type
E2560: 7-pin package with GPO connector RF input.
E2580: 13-pin package with GPO connector RF input.
Fiber
Standard single-mode fiber.
Connector
ST
; other connectors available on request.
RF Input Impedance
50
.
Bit Rate
10 Gbits/s.
E2560
E2580
Pin
Abbreviation
Definition
Pin
Abbreviation
Definition
--
--
--
13
TEC
Themoelectric cooler
--
--
--
12
TEC+
Thermoelectric cooler+
--
--
--
11
V
SS
Voltage supply to the IC
--
--
--
10
DCA
Duty cycle adjust
--
--
--
9
OA
Optical amplitude adjust
--
--
--
8
NC
No connect/reserved
7
TEC
Themoelectric cooler
7
NC
No connect/reserved
6
TEC+
Thermoelectric cooler+
6
VEA
Modular offset (on-state)
5
BACK DET+
Monitor cathode (+)
5
BACK DET+
Monitor cathode (+)
4
BACK DET
Monitor anode ()
4
BACK DET
Monitor anode ()
3
LASER+
Laser anode
3
LASER+
Laser anode
2
THERM
Thermistor
2
THERM
Thermistor
1
THERM, LASER,
CASE
Combined thermistor/
laser cathode/case
1
THERM, LASER,
CASE
Combined thermistor/
laser cathode/case
Lucent Technologies Inc.
3
Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Target Specifications
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Characteristics
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15
C to 35
C, except where noted.)
Parameter
Conditions
Limit
Unit
Laser Diode Reverse Voltage
CW
2
V
Laser Diode Forward Current
CW
150
mA
Optical Output Power
CW
10
mW
Modulator Reverse Voltage
--
5
V
Modulator Forward Voltage
--
1
V
Monitor Diode Reverse Voltage
--
10
V
Monitor Diode Forward Voltage
--
1
V
Storage Temperature
--
40 to +85
C
Operating Temperature
--
10 to +70
C
Parameter
Symbol
Conditions
Min
Max
Unit
Threshold Current (BOL)
I
th
--
5
35
mA
Forward Voltage
V
F
If = I
op
@ T
op
--
2.2
V
Operating Current
I
op
--
50
100
mA
Threshold Power
P
th
If I
th
V
m
= I
op
--
80
W
Fiber Output Power (Peak)
P
pk
V
m
= 0 V
If = I
op
1
--
dBm
Peak Wavelength
(Wavelength can be specified
to the ITU wavelength
channels.)
0
V
m
= 0 V
T
laser chip
= T
op
If = I
op
1530
1563
nm
Side-mode Suppression Ratio
SMSR
V
m
= 0 V
If = I
op,
T
op
30
--
dB
Dispersion Penalty
BER = 10
10
DP
10 Gbits/s*
V
low
= 1.5 to 3.0 V,
V
high
= 0 V to 1 V
If = l
op
@ T
op
--
2.0
dB
* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
Advance Data Sheet
E2560/E2580-Type 10 Gbits/s EML Modules
January 1999
4
Lucent Technologies Inc.
* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
T
case
= 70
C, T
laser chip
= 15
C to 35
C (E2560), 20
C to 35
C (E2580).
Modulator/Driver
Extinction Ratio
ER
RF
V
in
= 0.5 Vp-p to 1.0 Vp-p
10 Gbits/s (E2580)
V
m
= 0 V to 2.5 V
10 Gbits/s (E2560)
11
--
dB
RF Return Loss (E2560)
(0 GHz to 6 GHz)
S
11
V
m
= 1 V
If = I
op
10
--
dB
RF Return Loss (E2560)
(6 GHz to 8 GHz)
S
11
V
m
= 1 V
If = I
op
7
--
dB
RF Return Loss (E2560)
(8 GHz to 10 GHz)
S
11
V
m
= 1 V
If = I
op
5
--
dB
3 dB Bandwidth (E2560)
BW
V
m
= 1 V
If = I
op
11
--
GHz
RF Return Loss (E2560)
(0 GHz to 10 GHz)
S
11
V
in
= 0.5 Vp-p to 1.0 Vp-p
10 Gbits/s
10
--
dB
Input Voltage (E2580)
(Peak to Peak)
(ac coupled input)
V
IN
--
0.5
1.0
V
Rise/Fall Time
(20%--80%)
tr/tf
--
--
40
ps
Monitor Diode
Monitor Current
I
bd
V
bd
= 5 V
I
f
= I
op
40
1100
A
Dark Current
I
d
V
bd
= 5 V
--
0.1
A
Capacitance
C
V
bd
= 5 V
f = 1 MHz
--
25
pF
Thermistor
Resistance
R
therm
T = 25
C
9.5
10.5
k
Thermistor Current
I
tc
--
10
100
A
Thermistor B Constant
B
--
3700
4100
--
Thermoelectric Cooler
TEC Current
I
TEC
--
1.1
A
TEC Voltage
V
TEC
--
2.6
V
TEC Power
P
TEC
--
2.9
W
TEC Capacity
T
55
--
C
Optical Isolation
Optical Isolation
--
30
--
dB
Package
Wavelength vs. Case Temp.
d
/ dT
T
case
= 10
C to 70
C
--
0.5
pm/
C
Parameter
Symbol
Conditions
Min
Max
Unit
Target Specifications
(continued)
Table 4. Optical and Electrical Specifications (Chip operating temp. = 15
C to 35
C, except
where noted.)(continued)
Lucent Technologies Inc.
5
Advance Data Sheet
January 1999
E2560/E2580-Type 10 Gbits/s EML Modules
Outline Diagram
1-1006(F).r1
0.291
(7.38)
0.215
(5.47)
0.291
(7.384)
0.100
(2.54)
0.020
(0.508)
0.350
(8.89)
0.500
(12.7)
0.551
(13.99)
0.50
(12.7)
LEAD 7
LEAD 1
TRADEMARK CODE LASER SERIAL NUMBER
AND DATE CODE LABEL IN AREA SHOWN
BEND LIMITER
0.498
(12.64)
1.025
(26.04)
0.106
(2.7)
0.190
(4.822)
E2560:
0.078
(1.98)
0.050
(1.27)
0.020
(0.51)
0.350
(8.89)
0.500
(12.7)
0.551
(13.99)
50
(12.7)
LEAD 13
LEAD 1
TRADEMARK CODE LASER SERIAL NUMBER
AND DATE CODE LABEL IN AREA SHOWN
BEND LIMITER
0.498
(12.64)
1.025
(26.04)
0.106
(2.7)
0.190
(4.82)
E2580:
12 PLACES
CONNECTOR TYPE
AS SPECIFIED
1.180
(29.97)
2.032
(51.61)
0.820
(20.83)
TBD
0.56
(1.42)
0.365
(9.27)
0.180
(4.56)
0.030
(0.75)
0.228
(5.78)
0.98
(2.5)
0.260
(6.6)
0.200
(5.08)
0.078
(1.98)
0.010
0.002
(0.25
0.064)
MIN
3 PLACES
4 PLACES
PLACES
0.215
(5.45)
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